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Structural properties and current transport in a nanocomposite formed on a silicon surface by oxidation of the porous layer. / Sorokin, L. M.; Grigor'ev, L. V.; Kalmykov, A. E.; Sokolov, V. I.

в: Physics of the Solid State, Том 47, № 7, 2005, стр. 1365-1371.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Sorokin, LM, Grigor'ev, LV, Kalmykov, AE & Sokolov, VI 2005, 'Structural properties and current transport in a nanocomposite formed on a silicon surface by oxidation of the porous layer', Physics of the Solid State, Том. 47, № 7, стр. 1365-1371. https://doi.org/10.1134/1.1992619

APA

Sorokin, L. M., Grigor'ev, L. V., Kalmykov, A. E., & Sokolov, V. I. (2005). Structural properties and current transport in a nanocomposite formed on a silicon surface by oxidation of the porous layer. Physics of the Solid State, 47(7), 1365-1371. https://doi.org/10.1134/1.1992619

Vancouver

Sorokin LM, Grigor'ev LV, Kalmykov AE, Sokolov VI. Structural properties and current transport in a nanocomposite formed on a silicon surface by oxidation of the porous layer. Physics of the Solid State. 2005;47(7):1365-1371. https://doi.org/10.1134/1.1992619

Author

Sorokin, L. M. ; Grigor'ev, L. V. ; Kalmykov, A. E. ; Sokolov, V. I. / Structural properties and current transport in a nanocomposite formed on a silicon surface by oxidation of the porous layer. в: Physics of the Solid State. 2005 ; Том 47, № 7. стр. 1365-1371.

BibTeX

@article{0ec2443b56cc475fae679fdd7b24a80c,
title = "Structural properties and current transport in a nanocomposite formed on a silicon surface by oxidation of the porous layer",
abstract = "The possibility of obtaining a Si-SiO2 nanocomposite layer by oxidation of porous silicon is demonstrated. The nanocomposite thus prepared consists of silicon oxide with inclusions of crystalline silicon in the form of rounded particles 5 to 30 nm in diameter and a filamentary cellular structure with filaments a few nanometers thick. The I-V characteristics of these structures were measured under different sample excitation conditions (photo- and thermal stimulation). The trap concentration and effective carrier mobility are estimated. Carriers are found to be captured intensely by traps created in the large-area interface in the composite structure.",
author = "Sorokin, {L. M.} and Grigor'ev, {L. V.} and Kalmykov, {A. E.} and Sokolov, {V. I.}",
note = "Funding Information: ACKNOWLEDGMENTS This study was supported by the Department of Physical Sciences of the Russian Academy of Sciences (program “New Materials and Structures”).",
year = "2005",
doi = "10.1134/1.1992619",
language = "English",
volume = "47",
pages = "1365--1371",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "7",

}

RIS

TY - JOUR

T1 - Structural properties and current transport in a nanocomposite formed on a silicon surface by oxidation of the porous layer

AU - Sorokin, L. M.

AU - Grigor'ev, L. V.

AU - Kalmykov, A. E.

AU - Sokolov, V. I.

N1 - Funding Information: ACKNOWLEDGMENTS This study was supported by the Department of Physical Sciences of the Russian Academy of Sciences (program “New Materials and Structures”).

PY - 2005

Y1 - 2005

N2 - The possibility of obtaining a Si-SiO2 nanocomposite layer by oxidation of porous silicon is demonstrated. The nanocomposite thus prepared consists of silicon oxide with inclusions of crystalline silicon in the form of rounded particles 5 to 30 nm in diameter and a filamentary cellular structure with filaments a few nanometers thick. The I-V characteristics of these structures were measured under different sample excitation conditions (photo- and thermal stimulation). The trap concentration and effective carrier mobility are estimated. Carriers are found to be captured intensely by traps created in the large-area interface in the composite structure.

AB - The possibility of obtaining a Si-SiO2 nanocomposite layer by oxidation of porous silicon is demonstrated. The nanocomposite thus prepared consists of silicon oxide with inclusions of crystalline silicon in the form of rounded particles 5 to 30 nm in diameter and a filamentary cellular structure with filaments a few nanometers thick. The I-V characteristics of these structures were measured under different sample excitation conditions (photo- and thermal stimulation). The trap concentration and effective carrier mobility are estimated. Carriers are found to be captured intensely by traps created in the large-area interface in the composite structure.

UR - http://www.scopus.com/inward/record.url?scp=22944447175&partnerID=8YFLogxK

U2 - 10.1134/1.1992619

DO - 10.1134/1.1992619

M3 - Article

AN - SCOPUS:22944447175

VL - 47

SP - 1365

EP - 1371

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 7

ER -

ID: 86118992