Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Structural and spectroscopic studies of epitaxially overgrown GaN, n-GaN, and n+ -GaN contact layers. / Середин, Павел Владимирович; Goloshchapov, D. L.; Kostomakha, D.E. ; Peshkov, Y.A.; Buylov, N. S.; Gaivoronskaya, A. A.; Мизиров, Андрей Михайлович; Timoshnev, S. N.; Sobolev, M. S.; Убыйвовк, Евгений Викторович; Zemlyakov, V.I.; Kutsko, P.P.; Parmon, P.L.
в: Condensed Matter and Interphases, Том 26, № 3, 12.07.2024, стр. 526-535.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Structural and spectroscopic studies of epitaxially overgrown GaN, n-GaN, and n+ -GaN contact layers
AU - Середин, Павел Владимирович
AU - Goloshchapov, D. L.
AU - Kostomakha, D.E.
AU - Peshkov, Y.A.
AU - Buylov, N. S.
AU - Gaivoronskaya, A. A.
AU - Мизиров, Андрей Михайлович
AU - Timoshnev, S. N.
AU - Sobolev, M. S.
AU - Убыйвовк, Евгений Викторович
AU - Zemlyakov, V.I.
AU - Kutsko, P.P.
AU - Parmon, P.L.
PY - 2024/7/12
Y1 - 2024/7/12
N2 - The paper demonstrates that the technology of plasma-assisted molecular beam epitaxy (PA MBE) can be used to form epitaxially overgrown GaN, n-GaN, and n+-GaN contact layers with a high structural quality on virtual GaN/c-Al2O3 substrates under Ga-enriched conditions at relatively low growth temperatures of ~700 °C. It was shown that the initial stage of growth of the contact layers was accompanied by effective filtration of dislocations threading from the buffer GaN layer of the virtual substrate formed by MOCVD. The values of residual stresses calculated using the data of Raman microspectroscopy indicate a high structural quality of GaN, n-GaN, and n+-GaN contact layers regardless of the level of silicon doping. The contact resistance reduced to the pad width determined using the transmission line method for the structure with n+-GaN contact layer was ~0.11 Ohm·mm and for the n-GaN contact layer it was ~0.5 Ohm·mm.
AB - The paper demonstrates that the technology of plasma-assisted molecular beam epitaxy (PA MBE) can be used to form epitaxially overgrown GaN, n-GaN, and n+-GaN contact layers with a high structural quality on virtual GaN/c-Al2O3 substrates under Ga-enriched conditions at relatively low growth temperatures of ~700 °C. It was shown that the initial stage of growth of the contact layers was accompanied by effective filtration of dislocations threading from the buffer GaN layer of the virtual substrate formed by MOCVD. The values of residual stresses calculated using the data of Raman microspectroscopy indicate a high structural quality of GaN, n-GaN, and n+-GaN contact layers regardless of the level of silicon doping. The contact resistance reduced to the pad width determined using the transmission line method for the structure with n+-GaN contact layer was ~0.11 Ohm·mm and for the n-GaN contact layer it was ~0.5 Ohm·mm.
KW - GaN
KW - Molecular beam epitaxy
KW - Raman microspectroscopy
KW - Virtual substrate
KW - and n+-GaN contact layers
KW - n-GaN
UR - https://www.mendeley.com/catalogue/f3ce5fdb-a41b-3354-84f7-3eb111336747/
U2 - 10.17308/kcmf.2024.26/12228
DO - 10.17308/kcmf.2024.26/12228
M3 - Article
VL - 26
SP - 526
EP - 535
JO - Конденсированные среды и межфазные границы
JF - Конденсированные среды и межфазные границы
SN - 1606-867X
IS - 3
ER -
ID: 126065349