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Spin-orbit splitting of valence subbands in semiconductor nanostructures. / Durnev, M. V.; Glazov, M. M.; Ivchenko, E. L.

в: Physical Review B - Condensed Matter and Materials Physics, Том 89, № 7, 075430, 24.02.2014.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Durnev, MV, Glazov, MM & Ivchenko, EL 2014, 'Spin-orbit splitting of valence subbands in semiconductor nanostructures', Physical Review B - Condensed Matter and Materials Physics, Том. 89, № 7, 075430. https://doi.org/10.1103/PhysRevB.89.075430

APA

Durnev, M. V., Glazov, M. M., & Ivchenko, E. L. (2014). Spin-orbit splitting of valence subbands in semiconductor nanostructures. Physical Review B - Condensed Matter and Materials Physics, 89(7), [075430]. https://doi.org/10.1103/PhysRevB.89.075430

Vancouver

Durnev MV, Glazov MM, Ivchenko EL. Spin-orbit splitting of valence subbands in semiconductor nanostructures. Physical Review B - Condensed Matter and Materials Physics. 2014 Февр. 24;89(7). 075430. https://doi.org/10.1103/PhysRevB.89.075430

Author

Durnev, M. V. ; Glazov, M. M. ; Ivchenko, E. L. / Spin-orbit splitting of valence subbands in semiconductor nanostructures. в: Physical Review B - Condensed Matter and Materials Physics. 2014 ; Том 89, № 7.

BibTeX

@article{e3dec50a62fe4882a860fba6e242ad12,
title = "Spin-orbit splitting of valence subbands in semiconductor nanostructures",
abstract = "We propose a 14-band k·p model to calculate spin-orbit splittings of the valence subbands in semiconductor quantum wells. The reduced symmetry of quantum well interfaces is incorporated by means of additional terms in the boundary conditions which mix the Γ15 conduction and valence Bloch functions at the interfaces. It is demonstrated that the interface-induced effect makes the dominating contribution to the heavy-hole spin splitting. A simple analytical expression for the interface contribution is derived. In contrast to the 4×4 effective Hamiltonian model, where the problem of treating the Vzkz3 term seems to be unsolvable, the 14-band model naturally avoids and overcomes this problem. Our results are in agreement with the recent atomistic calculations [Luo, Phys. Rev. Lett. 104, 066405 (2010)PRLTAO0031- 900710.1103/PhysRevLett.104.066405].",
author = "Durnev, {M. V.} and Glazov, {M. M.} and Ivchenko, {E. L.}",
year = "2014",
month = feb,
day = "24",
doi = "10.1103/PhysRevB.89.075430",
language = "English",
volume = "89",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "7",

}

RIS

TY - JOUR

T1 - Spin-orbit splitting of valence subbands in semiconductor nanostructures

AU - Durnev, M. V.

AU - Glazov, M. M.

AU - Ivchenko, E. L.

PY - 2014/2/24

Y1 - 2014/2/24

N2 - We propose a 14-band k·p model to calculate spin-orbit splittings of the valence subbands in semiconductor quantum wells. The reduced symmetry of quantum well interfaces is incorporated by means of additional terms in the boundary conditions which mix the Γ15 conduction and valence Bloch functions at the interfaces. It is demonstrated that the interface-induced effect makes the dominating contribution to the heavy-hole spin splitting. A simple analytical expression for the interface contribution is derived. In contrast to the 4×4 effective Hamiltonian model, where the problem of treating the Vzkz3 term seems to be unsolvable, the 14-band model naturally avoids and overcomes this problem. Our results are in agreement with the recent atomistic calculations [Luo, Phys. Rev. Lett. 104, 066405 (2010)PRLTAO0031- 900710.1103/PhysRevLett.104.066405].

AB - We propose a 14-band k·p model to calculate spin-orbit splittings of the valence subbands in semiconductor quantum wells. The reduced symmetry of quantum well interfaces is incorporated by means of additional terms in the boundary conditions which mix the Γ15 conduction and valence Bloch functions at the interfaces. It is demonstrated that the interface-induced effect makes the dominating contribution to the heavy-hole spin splitting. A simple analytical expression for the interface contribution is derived. In contrast to the 4×4 effective Hamiltonian model, where the problem of treating the Vzkz3 term seems to be unsolvable, the 14-band model naturally avoids and overcomes this problem. Our results are in agreement with the recent atomistic calculations [Luo, Phys. Rev. Lett. 104, 066405 (2010)PRLTAO0031- 900710.1103/PhysRevLett.104.066405].

UR - http://www.scopus.com/inward/record.url?scp=84897787568&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.89.075430

DO - 10.1103/PhysRevB.89.075430

M3 - Article

AN - SCOPUS:84897787568

VL - 89

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 7

M1 - 075430

ER -

ID: 36366042