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Spin-dependent avoided-crossing effect on quantum-well states in Al/W(110). / Rybkin, A.G.; Shikin, A.M.; Marchenko, D.; Varykhalov, A.; Rader, O.

в: Physical Review B - Condensed Matter and Materials Physics, Том 85, № 4, 2012, стр. 045425_1-7.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Rybkin, AG, Shikin, AM, Marchenko, D, Varykhalov, A & Rader, O 2012, 'Spin-dependent avoided-crossing effect on quantum-well states in Al/W(110)', Physical Review B - Condensed Matter and Materials Physics, Том. 85, № 4, стр. 045425_1-7. https://doi.org/DOI: 10.1103/PhysRevB.85.045425

APA

Rybkin, A. G., Shikin, A. M., Marchenko, D., Varykhalov, A., & Rader, O. (2012). Spin-dependent avoided-crossing effect on quantum-well states in Al/W(110). Physical Review B - Condensed Matter and Materials Physics, 85(4), 045425_1-7. https://doi.org/DOI: 10.1103/PhysRevB.85.045425

Vancouver

Rybkin AG, Shikin AM, Marchenko D, Varykhalov A, Rader O. Spin-dependent avoided-crossing effect on quantum-well states in Al/W(110). Physical Review B - Condensed Matter and Materials Physics. 2012;85(4):045425_1-7. https://doi.org/DOI: 10.1103/PhysRevB.85.045425

Author

Rybkin, A.G. ; Shikin, A.M. ; Marchenko, D. ; Varykhalov, A. ; Rader, O. / Spin-dependent avoided-crossing effect on quantum-well states in Al/W(110). в: Physical Review B - Condensed Matter and Materials Physics. 2012 ; Том 85, № 4. стр. 045425_1-7.

BibTeX

@article{d3f91ed4487748a3a67f3adf1ce85fdf,
title = "Spin-dependent avoided-crossing effect on quantum-well states in Al/W(110)",
abstract = "Despite their low atomic number, Al films show large spin-orbit splittings when grown on W(110). Our spin- and angle-resolved photoemission experiment reveals two types of spin-orbit split states:quantum-well states with small Rashba splitting proportional to the electron wave vector in the film plane kpar(Rashba parameter 7*10-12 eVm for a 10 monolayer film) and substrate-derived interface states with large (0.5 eV) splitting. The E(kpar) dispersion of this pair of interface states changes only slightly up to 3 monolayers of Al. At higher Al coverages the quantum-well and interface states show a remarkable avoided-crossing efect in their band dispersions. This avoided-crossing efect obeys symmetry as well as spin and, therefore, leads to a strongly enhanced spin-orbit splitting of Al quantum-well states. This is shown by E(kpar) band dispersions and by spin- and angle-resolved spectra for several thicknesses up to 15 monolayers Al.",
keywords = "Spin-dependent avoided-crossing effect, thin films? quantum-well states",
author = "A.G. Rybkin and A.M. Shikin and D. Marchenko and A. Varykhalov and O. Rader",
year = "2012",
doi = "DOI: 10.1103/PhysRevB.85.045425",
language = "English",
volume = "85",
pages = "045425_1--7",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "4",

}

RIS

TY - JOUR

T1 - Spin-dependent avoided-crossing effect on quantum-well states in Al/W(110)

AU - Rybkin, A.G.

AU - Shikin, A.M.

AU - Marchenko, D.

AU - Varykhalov, A.

AU - Rader, O.

PY - 2012

Y1 - 2012

N2 - Despite their low atomic number, Al films show large spin-orbit splittings when grown on W(110). Our spin- and angle-resolved photoemission experiment reveals two types of spin-orbit split states:quantum-well states with small Rashba splitting proportional to the electron wave vector in the film plane kpar(Rashba parameter 7*10-12 eVm for a 10 monolayer film) and substrate-derived interface states with large (0.5 eV) splitting. The E(kpar) dispersion of this pair of interface states changes only slightly up to 3 monolayers of Al. At higher Al coverages the quantum-well and interface states show a remarkable avoided-crossing efect in their band dispersions. This avoided-crossing efect obeys symmetry as well as spin and, therefore, leads to a strongly enhanced spin-orbit splitting of Al quantum-well states. This is shown by E(kpar) band dispersions and by spin- and angle-resolved spectra for several thicknesses up to 15 monolayers Al.

AB - Despite their low atomic number, Al films show large spin-orbit splittings when grown on W(110). Our spin- and angle-resolved photoemission experiment reveals two types of spin-orbit split states:quantum-well states with small Rashba splitting proportional to the electron wave vector in the film plane kpar(Rashba parameter 7*10-12 eVm for a 10 monolayer film) and substrate-derived interface states with large (0.5 eV) splitting. The E(kpar) dispersion of this pair of interface states changes only slightly up to 3 monolayers of Al. At higher Al coverages the quantum-well and interface states show a remarkable avoided-crossing efect in their band dispersions. This avoided-crossing efect obeys symmetry as well as spin and, therefore, leads to a strongly enhanced spin-orbit splitting of Al quantum-well states. This is shown by E(kpar) band dispersions and by spin- and angle-resolved spectra for several thicknesses up to 15 monolayers Al.

KW - Spin-dependent avoided-crossing effect

KW - thin films? quantum-well states

U2 - DOI: 10.1103/PhysRevB.85.045425

DO - DOI: 10.1103/PhysRevB.85.045425

M3 - Article

VL - 85

SP - 045425_1-7

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 4

ER -

ID: 5285417