Standard
Spin memory in the n-doped GaAs/AlGaAs quantum wells. / Verbin, SY; Efimov, YP; Petrov, VV; Ignatiev, IV; Dolgikh, YK; Eliseev, SA; Gerlovin, IY; Ovsyankin, VV; Masumoto, Y.
в:
Proceedings of SPIE - The International Society for Optical Engineering, Том 5023, 2003, стр. 432-435.
Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Harvard
Verbin, SY, Efimov, YP, Petrov, VV
, Ignatiev, IV, Dolgikh, YK, Eliseev, SA
, Gerlovin, IY, Ovsyankin, VV & Masumoto, Y 2003, '
Spin memory in the n-doped GaAs/AlGaAs quantum wells',
Proceedings of SPIE - The International Society for Optical Engineering, Том. 5023, стр. 432-435. <
http://elibrary.ru/item.asp?id=15036402>
APA
Verbin, SY., Efimov, YP., Petrov, VV.
, Ignatiev, IV., Dolgikh, YK., Eliseev, SA.
, Gerlovin, IY., Ovsyankin, VV., & Masumoto, Y. (2003).
Spin memory in the n-doped GaAs/AlGaAs quantum wells.
Proceedings of SPIE - The International Society for Optical Engineering,
5023, 432-435.
http://elibrary.ru/item.asp?id=15036402
Vancouver
Author
BibTeX
@article{4b725dcde55b41319826710f41a604e2,
title = "Spin memory in the n-doped GaAs/AlGaAs quantum wells",
author = "SY Verbin and YP Efimov and VV Petrov and IV Ignatiev and YK Dolgikh and SA Eliseev and IY Gerlovin and VV Ovsyankin and Y Masumoto",
year = "2003",
language = "не определен",
volume = "5023",
pages = "432--435",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",
}
RIS
TY - JOUR
T1 - Spin memory in the n-doped GaAs/AlGaAs quantum wells
AU - Verbin, SY
AU - Efimov, YP
AU - Petrov, VV
AU - Ignatiev, IV
AU - Dolgikh, YK
AU - Eliseev, SA
AU - Gerlovin, IY
AU - Ovsyankin, VV
AU - Masumoto, Y
PY - 2003
Y1 - 2003
M3 - статья
VL - 5023
SP - 432
EP - 435
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
ER -
