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Spin inertia of resident and photoexcited carriers in singly charged quantum dots. / Zhukov, E. A.; Kirstein, E.; Smirnov, D. S.; Yakovlev, D. R.; Glazov, M. M.; Reuter, D.; Wieck, A. D.; Bayer, M.; Greilich, A.

в: Physical Review B, Том 98, № 12, 121304, 14.09.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Zhukov, EA, Kirstein, E, Smirnov, DS, Yakovlev, DR, Glazov, MM, Reuter, D, Wieck, AD, Bayer, M & Greilich, A 2018, 'Spin inertia of resident and photoexcited carriers in singly charged quantum dots', Physical Review B, Том. 98, № 12, 121304. https://doi.org/10.1103/PhysRevB.98.121304

APA

Zhukov, E. A., Kirstein, E., Smirnov, D. S., Yakovlev, D. R., Glazov, M. M., Reuter, D., Wieck, A. D., Bayer, M., & Greilich, A. (2018). Spin inertia of resident and photoexcited carriers in singly charged quantum dots. Physical Review B, 98(12), [121304]. https://doi.org/10.1103/PhysRevB.98.121304

Vancouver

Zhukov EA, Kirstein E, Smirnov DS, Yakovlev DR, Glazov MM, Reuter D и пр. Spin inertia of resident and photoexcited carriers in singly charged quantum dots. Physical Review B. 2018 Сент. 14;98(12). 121304. https://doi.org/10.1103/PhysRevB.98.121304

Author

Zhukov, E. A. ; Kirstein, E. ; Smirnov, D. S. ; Yakovlev, D. R. ; Glazov, M. M. ; Reuter, D. ; Wieck, A. D. ; Bayer, M. ; Greilich, A. / Spin inertia of resident and photoexcited carriers in singly charged quantum dots. в: Physical Review B. 2018 ; Том 98, № 12.

BibTeX

@article{13f319c72c4c445c8a58bf5683aa5612,
title = "Spin inertia of resident and photoexcited carriers in singly charged quantum dots",
abstract = "The spin dynamics in a broad range of systems can be studied using circularly polarized optical excitation with alternating helicity. The dependence of spin polarization on the frequency of helicity alternation, known as the spin inertia effect, is used here to study the spin dynamics in singly charged (In,Ga)As/GaAs quantum dots (QDs), providing insight into spin generation and accumulation processes. We demonstrate that the dependence of spin polarization in n- and p-type QDs on the external magnetic field has a characteristic V- and M-like shape, respectively. This difference is related to different microscopic mechanisms of the resident carriers' spin orientation. It allows us to determine the parameters of the spin dynamics both for the ground and excited states of singly charged QDs.",
author = "Zhukov, {E. A.} and E. Kirstein and Smirnov, {D. S.} and Yakovlev, {D. R.} and Glazov, {M. M.} and D. Reuter and Wieck, {A. D.} and M. Bayer and A. Greilich",
year = "2018",
month = sep,
day = "14",
doi = "10.1103/PhysRevB.98.121304",
language = "English",
volume = "98",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Spin inertia of resident and photoexcited carriers in singly charged quantum dots

AU - Zhukov, E. A.

AU - Kirstein, E.

AU - Smirnov, D. S.

AU - Yakovlev, D. R.

AU - Glazov, M. M.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Bayer, M.

AU - Greilich, A.

PY - 2018/9/14

Y1 - 2018/9/14

N2 - The spin dynamics in a broad range of systems can be studied using circularly polarized optical excitation with alternating helicity. The dependence of spin polarization on the frequency of helicity alternation, known as the spin inertia effect, is used here to study the spin dynamics in singly charged (In,Ga)As/GaAs quantum dots (QDs), providing insight into spin generation and accumulation processes. We demonstrate that the dependence of spin polarization in n- and p-type QDs on the external magnetic field has a characteristic V- and M-like shape, respectively. This difference is related to different microscopic mechanisms of the resident carriers' spin orientation. It allows us to determine the parameters of the spin dynamics both for the ground and excited states of singly charged QDs.

AB - The spin dynamics in a broad range of systems can be studied using circularly polarized optical excitation with alternating helicity. The dependence of spin polarization on the frequency of helicity alternation, known as the spin inertia effect, is used here to study the spin dynamics in singly charged (In,Ga)As/GaAs quantum dots (QDs), providing insight into spin generation and accumulation processes. We demonstrate that the dependence of spin polarization in n- and p-type QDs on the external magnetic field has a characteristic V- and M-like shape, respectively. This difference is related to different microscopic mechanisms of the resident carriers' spin orientation. It allows us to determine the parameters of the spin dynamics both for the ground and excited states of singly charged QDs.

UR - http://www.scopus.com/inward/record.url?scp=85053443771&partnerID=8YFLogxK

UR - http://www.mendeley.com/research/spin-inertia-resident-photoexcited-carriers-singly-charged-quantum-dots

U2 - 10.1103/PhysRevB.98.121304

DO - 10.1103/PhysRevB.98.121304

M3 - Article

AN - SCOPUS:85053443771

VL - 98

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 12

M1 - 121304

ER -

ID: 36289400