Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2. / Filianina, M. V.; Klimovskikh, I. I.; Shvets, I. A.; Rybkin, A. G.; Petukhov, A. E.; Chulkov, E. V.; Golyashov, V. A.; Kokh, K. A.; Tereshchenko, O. E.; Polley, C.; Balasubramanian, T.; Leandersson, M.; Shikin, A. M.
в: Materials Chemistry and Physics, Том 207, 01.03.2018, стр. 253-258.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2
AU - Filianina, M. V.
AU - Klimovskikh, I. I.
AU - Shvets, I. A.
AU - Rybkin, A. G.
AU - Petukhov, A. E.
AU - Chulkov, E. V.
AU - Golyashov, V. A.
AU - Kokh, K. A.
AU - Tereshchenko, O. E.
AU - Polley, C.
AU - Balasubramanian, T.
AU - Leandersson, M.
AU - Shikin, A. M.
PY - 2018/3/1
Y1 - 2018/3/1
N2 - Electronic and spin structure of the Dirac-cone-like topological surface and valence band states were studied experimentally and theoretically for topological insulator with fractional stoichiometry Bi1.5Sb0.5Te1.8Se1.2 which is considered as one of the best candidates for efficient spin-polarized current generation. By means of spin- and angle-resolved photoelectron spectroscopy we demonstrate the separation of the Dirac point from the bulk states and the helical spin structure of the Dirac cone. For the freshly cleaved surface the Fermi level is located in the bulk band gap and an exposure in residual gases shifts the Fermi level towards the bulk conduction band. Results of the theoretical calculations are in a good agreement with the experimental data. Surface morphology study shows a well-structured atomically sharp surface after cleavage. The transport measurements confirm that this topological insulator has relatively high resistance with semiconductor-like temperature dependence at low temperatures. The studied Bi1.5Sb0.5Te1.8Se1.2 crystals demonstrated a quite large Seebeck coefficient values reaching −400 μV/K at room temperature.
AB - Electronic and spin structure of the Dirac-cone-like topological surface and valence band states were studied experimentally and theoretically for topological insulator with fractional stoichiometry Bi1.5Sb0.5Te1.8Se1.2 which is considered as one of the best candidates for efficient spin-polarized current generation. By means of spin- and angle-resolved photoelectron spectroscopy we demonstrate the separation of the Dirac point from the bulk states and the helical spin structure of the Dirac cone. For the freshly cleaved surface the Fermi level is located in the bulk band gap and an exposure in residual gases shifts the Fermi level towards the bulk conduction band. Results of the theoretical calculations are in a good agreement with the experimental data. Surface morphology study shows a well-structured atomically sharp surface after cleavage. The transport measurements confirm that this topological insulator has relatively high resistance with semiconductor-like temperature dependence at low temperatures. The studied Bi1.5Sb0.5Te1.8Se1.2 crystals demonstrated a quite large Seebeck coefficient values reaching −400 μV/K at room temperature.
KW - ARPES
KW - Electronic structure
KW - Topological insulators
UR - http://www.scopus.com/inward/record.url?scp=85041488706&partnerID=8YFLogxK
U2 - 10.1016/j.matchemphys.2017.12.035
DO - 10.1016/j.matchemphys.2017.12.035
M3 - Article
VL - 207
SP - 253
EP - 258
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
SN - 0254-0584
ER -
ID: 7620727