Standard

Specific Features of the Field Generation of Minority Charge Carriers in Si–SiO2 Structures. / Baraban, A.P.; Konorov, P.P.; Dmitriev, V.A.; Prokof'ev, V.A.

в: Semiconductors, Том 47, № 4, 2013, стр. 511-513.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Baraban, AP, Konorov, PP, Dmitriev, VA & Prokof'ev, VA 2013, 'Specific Features of the Field Generation of Minority Charge Carriers in Si–SiO2 Structures', Semiconductors, Том. 47, № 4, стр. 511-513. https://doi.org/10.1134/S1063782613040040

APA

Baraban, A. P., Konorov, P. P., Dmitriev, V. A., & Prokof'ev, V. A. (2013). Specific Features of the Field Generation of Minority Charge Carriers in Si–SiO2 Structures. Semiconductors, 47(4), 511-513. https://doi.org/10.1134/S1063782613040040

Vancouver

Baraban AP, Konorov PP, Dmitriev VA, Prokof'ev VA. Specific Features of the Field Generation of Minority Charge Carriers in Si–SiO2 Structures. Semiconductors. 2013;47(4):511-513. https://doi.org/10.1134/S1063782613040040

Author

Baraban, A.P. ; Konorov, P.P. ; Dmitriev, V.A. ; Prokof'ev, V.A. / Specific Features of the Field Generation of Minority Charge Carriers in Si–SiO2 Structures. в: Semiconductors. 2013 ; Том 47, № 4. стр. 511-513.

BibTeX

@article{4837e0a4d68e4afab49bb4ea85e55010,
title = "Specific Features of the Field Generation of Minority Charge Carriers in Si–SiO2 Structures",
author = "A.P. Baraban and P.P. Konorov and V.A. Dmitriev and V.A. Prokof'ev",
year = "2013",
doi = "10.1134/S1063782613040040",
language = "English",
volume = "47",
pages = "511--513",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "4",

}

RIS

TY - JOUR

T1 - Specific Features of the Field Generation of Minority Charge Carriers in Si–SiO2 Structures

AU - Baraban, A.P.

AU - Konorov, P.P.

AU - Dmitriev, V.A.

AU - Prokof'ev, V.A.

PY - 2013

Y1 - 2013

U2 - 10.1134/S1063782613040040

DO - 10.1134/S1063782613040040

M3 - Article

VL - 47

SP - 511

EP - 513

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 4

ER -

ID: 7379200