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Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors. / Romaka, V. A.; Shelyapina, M. G.; Gorelenko, Yu K.; Fruchart, D.; Stadnyk, Yu V.; Romaka, L. P.; Chekurin, V. F.

в: Semiconductors, Том 40, № 6, 06.2006, стр. 655-661.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Romaka, VA, Shelyapina, MG, Gorelenko, YK, Fruchart, D, Stadnyk, YV, Romaka, LP & Chekurin, VF 2006, 'Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors', Semiconductors, Том. 40, № 6, стр. 655-661. https://doi.org/10.1134/S106378260606008X

APA

Romaka, V. A., Shelyapina, M. G., Gorelenko, Y. K., Fruchart, D., Stadnyk, Y. V., Romaka, L. P., & Chekurin, V. F. (2006). Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors. Semiconductors, 40(6), 655-661. https://doi.org/10.1134/S106378260606008X

Vancouver

Romaka VA, Shelyapina MG, Gorelenko YK, Fruchart D, Stadnyk YV, Romaka LP и пр. Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors. Semiconductors. 2006 Июнь;40(6):655-661. https://doi.org/10.1134/S106378260606008X

Author

Romaka, V. A. ; Shelyapina, M. G. ; Gorelenko, Yu K. ; Fruchart, D. ; Stadnyk, Yu V. ; Romaka, L. P. ; Chekurin, V. F. / Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors. в: Semiconductors. 2006 ; Том 40, № 6. стр. 655-661.

BibTeX

@article{55c92c43497b4d0fbb7878d9e6b52459,
title = "Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors",
abstract = "The effect of high concentrations of acceptor dopants (N A = 1020 cm-3) on the electronic structure, Fermi level, electrical conductivity, Seebeck coefficient, and magnetic susceptibility of n-ZrNiSn intermetallic semiconductors is studied. The role of impurity bands produced by donors and acceptors in the conductivity of the heavily doped n-ZrNiSn compound is clarified. The transition from activated conductivity to metal conductivity under variations in the concentration of acceptor dopants is observed.",
author = "Romaka, {V. A.} and Shelyapina, {M. G.} and Gorelenko, {Yu K.} and D. Fruchart and Stadnyk, {Yu V.} and Romaka, {L. P.} and Chekurin, {V. F.}",
year = "2006",
month = jun,
doi = "10.1134/S106378260606008X",
language = "English",
volume = "40",
pages = "655--661",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "6",

}

RIS

TY - JOUR

T1 - Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors

AU - Romaka, V. A.

AU - Shelyapina, M. G.

AU - Gorelenko, Yu K.

AU - Fruchart, D.

AU - Stadnyk, Yu V.

AU - Romaka, L. P.

AU - Chekurin, V. F.

PY - 2006/6

Y1 - 2006/6

N2 - The effect of high concentrations of acceptor dopants (N A = 1020 cm-3) on the electronic structure, Fermi level, electrical conductivity, Seebeck coefficient, and magnetic susceptibility of n-ZrNiSn intermetallic semiconductors is studied. The role of impurity bands produced by donors and acceptors in the conductivity of the heavily doped n-ZrNiSn compound is clarified. The transition from activated conductivity to metal conductivity under variations in the concentration of acceptor dopants is observed.

AB - The effect of high concentrations of acceptor dopants (N A = 1020 cm-3) on the electronic structure, Fermi level, electrical conductivity, Seebeck coefficient, and magnetic susceptibility of n-ZrNiSn intermetallic semiconductors is studied. The role of impurity bands produced by donors and acceptors in the conductivity of the heavily doped n-ZrNiSn compound is clarified. The transition from activated conductivity to metal conductivity under variations in the concentration of acceptor dopants is observed.

UR - http://www.scopus.com/inward/record.url?scp=33744737906&partnerID=8YFLogxK

U2 - 10.1134/S106378260606008X

DO - 10.1134/S106378260606008X

M3 - Article

AN - SCOPUS:33744737906

VL - 40

SP - 655

EP - 661

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 6

ER -

ID: 16796704