Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Spatially-resolved emission of GaAs/AlGaAs quantum dots grown by nanohole-filled droplet epitaxy. / Дерибина, Екатерина Игоревна; Мурзин, Алексей Олегович; Башегурова, Елена Александровна; Самсонова, Анна Юрьевна; Ложкин, Максим Сергеевич; Ловцюс, Вячеслав Альгердович; Елисеев, Сергей Алексеевич; Ефимов, Юрий Петрович; Капитонов, Юрий Владимирович.
в: Physical Review B - Condensed Matter and Materials Physics, Том 108, № 20, 205305, 27.11.2023.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Spatially-resolved emission of GaAs/AlGaAs quantum dots grown by nanohole-filled droplet epitaxy
AU - Дерибина, Екатерина Игоревна
AU - Мурзин, Алексей Олегович
AU - Башегурова, Елена Александровна
AU - Самсонова, Анна Юрьевна
AU - Ложкин, Максим Сергеевич
AU - Ловцюс, Вячеслав Альгердович
AU - Елисеев, Сергей Алексеевич
AU - Ефимов, Юрий Петрович
AU - Капитонов, Юрий Владимирович
PY - 2023/11/27
Y1 - 2023/11/27
N2 - GaAs/AlGaAs quantum dots created by the nanohole-filling droplet epitaxy are promising for applications in information photonics due to the low mechanical stress in these lattice-matched heterostructures. In this work, we have carried out a detailed study of the optical properties of such quantum dots using microphotoluminescence and reflection spectroscopy. For quantum dots grown by molecular beam epitaxy with a density of about 1 μm-2, the photoluminescence signal was scanned with a spatial resolution of about 1 μm. A correlation map was constructed for the spatial derivatives of the photoluminescence spectra in order to identify the emission bands that correlate with each other. It was found that QD A (E=1.56 eV), QD B1 (E=1.61eV), and QD B2 (E=1.65eV) bands originate from the same regions of the sample. The smaller width and the lower energy position of the QD A band allow it to be related to the central part of the quantum dot, while the QD B1 and the QD B2 bands' origins are smaller quantum-sized objects located around the same dot. All these bands are observed in anticorrelation with the signal from the heavy-hole exciton in the quantum well.
AB - GaAs/AlGaAs quantum dots created by the nanohole-filling droplet epitaxy are promising for applications in information photonics due to the low mechanical stress in these lattice-matched heterostructures. In this work, we have carried out a detailed study of the optical properties of such quantum dots using microphotoluminescence and reflection spectroscopy. For quantum dots grown by molecular beam epitaxy with a density of about 1 μm-2, the photoluminescence signal was scanned with a spatial resolution of about 1 μm. A correlation map was constructed for the spatial derivatives of the photoluminescence spectra in order to identify the emission bands that correlate with each other. It was found that QD A (E=1.56 eV), QD B1 (E=1.61eV), and QD B2 (E=1.65eV) bands originate from the same regions of the sample. The smaller width and the lower energy position of the QD A band allow it to be related to the central part of the quantum dot, while the QD B1 and the QD B2 bands' origins are smaller quantum-sized objects located around the same dot. All these bands are observed in anticorrelation with the signal from the heavy-hole exciton in the quantum well.
KW - квантовые точки
KW - молекулярно-пучковая эпитаксия
UR - https://www.mendeley.com/catalogue/87d9c1fa-6568-34f5-a42e-07867bbcff28/
U2 - 10.1103/physrevb.108.205305
DO - 10.1103/physrevb.108.205305
M3 - статья
VL - 108
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 20
M1 - 205305
ER -
ID: 114411816