Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Sol–gel prepared ZnO: UV irradiation effect on structure and surface properties. / Sukhov, I.; Filippov, I.A.; Pronin, I. A.; Sysoev, V.V.; Kondratev, V.M.; Комолов, Алексей Сергеевич; Лазнева, Элеонора Федоровна; Karmanov, Andrey A.; Yakushova, N. D.; Moshnikov, V. A.; Korotchenkov, G.S.
в: Mendeleev Communications, Том 34, № 5, 01.09.2024, стр. 643-646.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Sol–gel prepared ZnO: UV irradiation effect on structure and surface properties
AU - Sukhov, I.
AU - Filippov, I.A.
AU - Pronin, I. A.
AU - Sysoev, V.V.
AU - Kondratev, V.M.
AU - Комолов, Алексей Сергеевич
AU - Лазнева, Элеонора Федоровна
AU - Karmanov, Andrey A.
AU - Yakushova, N. D.
AU - Moshnikov, V. A.
AU - Korotchenkov, G.S.
PY - 2024/9/1
Y1 - 2024/9/1
N2 - The effect of UV irradiation on sol–gel prepared ZnO films subjected to mild thermal annealing was investigated, with special attention to their structural and surface properties. Sol–gel processes, including a high-temperature annealing stage, have been adapted to the requirements of flexible electronics for in situ synthesis of semiconductor ZnO films on polymer substrates at lower temperatures due to UV irradiation. Application of UV radiation with emission peaks at 185 and 254 nm to films annealed at 180 °C made it possible to obtain ZnO films with Zn/O ratios of ca. 1, which cannot be achieved by heat treatment alone.
AB - The effect of UV irradiation on sol–gel prepared ZnO films subjected to mild thermal annealing was investigated, with special attention to their structural and surface properties. Sol–gel processes, including a high-temperature annealing stage, have been adapted to the requirements of flexible electronics for in situ synthesis of semiconductor ZnO films on polymer substrates at lower temperatures due to UV irradiation. Application of UV radiation with emission peaks at 185 and 254 nm to films annealed at 180 °C made it possible to obtain ZnO films with Zn/O ratios of ca. 1, which cannot be achieved by heat treatment alone.
KW - UV irradiation effect
KW - XPS
KW - epidermal electronics
KW - sol–gel technology
KW - zinc oxide
UR - https://www.mendeley.com/catalogue/7b1df9d7-3b29-3e4e-b961-a6c5579cfb1c/
U2 - 10.1016/j.mencom.2024.09.006
DO - 10.1016/j.mencom.2024.09.006
M3 - Article
VL - 34
SP - 643
EP - 646
JO - Mendeleev Communications
JF - Mendeleev Communications
SN - 0959-9436
IS - 5
ER -
ID: 125656854