Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Solar cells based on CCSVT-grown CuGaSe2-absorber and device properties. / Rusu, M.; Doka, S.; Kaufmann, C. A.; Grigorieva, N.; Schedel-Niedrig, Th; Lux-Steiner, M. Ch.
в: Thin Solid Films, Том 480-481, 01.06.2005, стр. 341-346.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Solar cells based on CCSVT-grown CuGaSe2-absorber and device properties
AU - Rusu, M.
AU - Doka, S.
AU - Kaufmann, C. A.
AU - Grigorieva, N.
AU - Schedel-Niedrig, Th
AU - Lux-Steiner, M. Ch
PY - 2005/6/1
Y1 - 2005/6/1
N2 - For solar cells based on CuGaSe2 (CGSe) polycrystalline thin films, a novel efficient chemical close-spaced vapor transport (CCSVT) technique is used to deposit the CGSe absorber. Clean and Mo-coated soda lime glass (SLG) substrates are used for the CGSe deposition. The CGSe thickness ranges from 1.6 to 1.9 μm and the corresponding [Ga]/[Cu] ratio of the thin films is adjusted within the range of 0.9-1.3. The high bulk homogeneity of the as-grown CGSe films is shown. Transmittance and reflectance measurements were performed to monitor the changes in the CGSe band gap as a function of composition. The optical spectra reveal a shift of the absorption edge towards longer wavelengths with increasing Ga content, as well as a broadening of the distinct structure corresponding to three band-to-band transitions characteristic for CGSe. These results are used for a discussion of the behaviour of the ZnO/CdS/CuGaSe 2 solar cell photovoltaic parameters as well of the current transport. The transport mechanism is analysed on an our best solar cell device with an active area efficiency of 8.7%. For the first time, a thermally activated Shockley-Read-Hall recombination mechanism is observed for the CGSe-based solar cells in a large temperature region.
AB - For solar cells based on CuGaSe2 (CGSe) polycrystalline thin films, a novel efficient chemical close-spaced vapor transport (CCSVT) technique is used to deposit the CGSe absorber. Clean and Mo-coated soda lime glass (SLG) substrates are used for the CGSe deposition. The CGSe thickness ranges from 1.6 to 1.9 μm and the corresponding [Ga]/[Cu] ratio of the thin films is adjusted within the range of 0.9-1.3. The high bulk homogeneity of the as-grown CGSe films is shown. Transmittance and reflectance measurements were performed to monitor the changes in the CGSe band gap as a function of composition. The optical spectra reveal a shift of the absorption edge towards longer wavelengths with increasing Ga content, as well as a broadening of the distinct structure corresponding to three band-to-band transitions characteristic for CGSe. These results are used for a discussion of the behaviour of the ZnO/CdS/CuGaSe 2 solar cell photovoltaic parameters as well of the current transport. The transport mechanism is analysed on an our best solar cell device with an active area efficiency of 8.7%. For the first time, a thermally activated Shockley-Read-Hall recombination mechanism is observed for the CGSe-based solar cells in a large temperature region.
KW - CCSVT
KW - CuGaSe
KW - Solar cells
KW - Transport mechanism
UR - http://www.scopus.com/inward/record.url?scp=18444384540&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2004.11.088
DO - 10.1016/j.tsf.2004.11.088
M3 - Article
AN - SCOPUS:18444384540
VL - 480-481
SP - 341
EP - 346
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -
ID: 45032173