Standard

Single Electron Gating of Topological Insulators. / Sessi, P.; Bathon, T.; Kokh, K. A.; Tereshchenko, O. E.; Bode, M.

в: Advanced Materials, 2016.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Sessi, P, Bathon, T, Kokh, KA, Tereshchenko, OE & Bode, M 2016, 'Single Electron Gating of Topological Insulators', Advanced Materials.

APA

Sessi, P., Bathon, T., Kokh, K. A., Tereshchenko, O. E., & Bode, M. (2016). Single Electron Gating of Topological Insulators. Advanced Materials.

Vancouver

Sessi P, Bathon T, Kokh KA, Tereshchenko OE, Bode M. Single Electron Gating of Topological Insulators. Advanced Materials. 2016.

Author

Sessi, P. ; Bathon, T. ; Kokh, K. A. ; Tereshchenko, O. E. ; Bode, M. / Single Electron Gating of Topological Insulators. в: Advanced Materials. 2016.

BibTeX

@article{bad9332973f9434297f29d0658e60596,
title = "Single Electron Gating of Topological Insulators",
author = "P. Sessi and T. Bathon and Kokh, {K. A.} and Tereshchenko, {O. E.} and M. Bode",
year = "2016",
language = "не определен",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-Blackwell",

}

RIS

TY - JOUR

T1 - Single Electron Gating of Topological Insulators

AU - Sessi, P.

AU - Bathon, T.

AU - Kokh, K. A.

AU - Tereshchenko, O. E.

AU - Bode, M.

PY - 2016

Y1 - 2016

M3 - статья

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

ER -

ID: 7619284