Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Silicon nanostructures for IR light emitters. / Kittler, M.; Arguirov, T.; Seifert, W.; Yu, X.; Jia, G.; Vyvenko, O. F.; Mchedlidze, T.; Reiche, M.; Sha, J.; Yang, D.
в: Materials Science and Engineering C, Том 27, № 5-8 SPEC. ISS., 09.2007, стр. 1252-1259.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Silicon nanostructures for IR light emitters
AU - Kittler, M.
AU - Arguirov, T.
AU - Seifert, W.
AU - Yu, X.
AU - Jia, G.
AU - Vyvenko, O. F.
AU - Mchedlidze, T.
AU - Reiche, M.
AU - Sha, J.
AU - Yang, D.
N1 - Funding Information: The authors would like to thank A. Fischer for process and device simulation and R. Kurps for SIMS measurements. Parts of this work have been supported by the Volkswagenstiftung Hannover, Germany.
PY - 2007/9
Y1 - 2007/9
N2 - The paper presents a critical analysis of Si light emitters made by ion implantation and describes novel concepts for IR light emitters based on silicon nanostructures that do not need Er doping. It is shown that dislocation networks which can be generated in a well controlled way by wafer direct bonding exhibit promising light emitting properties. The luminescence of the dislocation networks can be tailored by the choice of the misorientation of the bonded wafers. It is demonstrated that efficient D1 emission (1.55 μm) at 300 K or D3 emission (1.3 μm) can be obtained for specific misorientations. An enhancement of the luminescence is observed when applying a bias voltage across the network, caused by a changed occupation of the states at the network. Oxygen in the dislocation network is supposed to increase the intensity of the D1 luminescence. Si nanowires are discussed as another potential candidate for IR emitters. Among other lines, efficient luminescence around 1.55 μm is found at 300 K in nanowires. This emission line is attributed to extended defects within the nanowires.
AB - The paper presents a critical analysis of Si light emitters made by ion implantation and describes novel concepts for IR light emitters based on silicon nanostructures that do not need Er doping. It is shown that dislocation networks which can be generated in a well controlled way by wafer direct bonding exhibit promising light emitting properties. The luminescence of the dislocation networks can be tailored by the choice of the misorientation of the bonded wafers. It is demonstrated that efficient D1 emission (1.55 μm) at 300 K or D3 emission (1.3 μm) can be obtained for specific misorientations. An enhancement of the luminescence is observed when applying a bias voltage across the network, caused by a changed occupation of the states at the network. Oxygen in the dislocation network is supposed to increase the intensity of the D1 luminescence. Si nanowires are discussed as another potential candidate for IR emitters. Among other lines, efficient luminescence around 1.55 μm is found at 300 K in nanowires. This emission line is attributed to extended defects within the nanowires.
KW - D-bands
KW - Dislocations
KW - LED
KW - Luminescence
KW - Nanowires
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=34547699275&partnerID=8YFLogxK
U2 - 10.1016/j.msec.2006.09.034
DO - 10.1016/j.msec.2006.09.034
M3 - Article
AN - SCOPUS:34547699275
VL - 27
SP - 1252
EP - 1259
JO - Materials Science and Engineering C
JF - Materials Science and Engineering C
SN - 0928-4931
IS - 5-8 SPEC. ISS.
ER -
ID: 87673002