Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons

Standard

Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons. / Senkovskiy, Boris V.; Fedorov, Alexander V.; Haberer, Danny; Farjam, Mani; Simonov, Konstantin A.; Preobrajenski, Alexei B.; Mårtensson, Niels; Atodiresei, Nicolae; Caciuc, Vasile; Blügel, Stefan; Rosch, Achim; Verbitskiy, Nikolay I.; Hell, Martin; Evtushinsky, Daniil V.; German, Raphael; Marangoni, Tomas; van Loosdrecht, Paul H.M.; Fischer, Felix R.; Grüneis, Alexander.

в: Advanced Electronic aterials , Том 3, № 4, 1600490, 01.04.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Senkovskiy, BV, Fedorov, AV, Haberer, D, Farjam, M, Simonov, KA, Preobrajenski, AB, Mårtensson, N, Atodiresei, N, Caciuc, V, Blügel, S, Rosch, A, Verbitskiy, NI, Hell, M, Evtushinsky, DV, German, R, Marangoni, T, van Loosdrecht, PHM, Fischer, FR & Grüneis, A 2017, 'Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons', Advanced Electronic aterials , Том. 3, № 4, 1600490. https://doi.org/10.1002/aelm.201600490

APA

Senkovskiy, B. V., Fedorov, A. V., Haberer, D., Farjam, M., Simonov, K. A., Preobrajenski, A. B., Mårtensson, N., Atodiresei, N., Caciuc, V., Blügel, S., Rosch, A., Verbitskiy, N. I., Hell, M., Evtushinsky, D. V., German, R., Marangoni, T., van Loosdrecht, P. H. M., Fischer, F. R., & Grüneis, A. (2017). Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons. Advanced Electronic aterials , 3(4), [1600490]. https://doi.org/10.1002/aelm.201600490

Vancouver

Senkovskiy BV, Fedorov AV, Haberer D, Farjam M, Simonov KA, Preobrajenski AB и пр. Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons. Advanced Electronic aterials . 2017 Апр. 1;3(4). 1600490. https://doi.org/10.1002/aelm.201600490

Author

Senkovskiy, Boris V. ; Fedorov, Alexander V. ; Haberer, Danny ; Farjam, Mani ; Simonov, Konstantin A. ; Preobrajenski, Alexei B. ; Mårtensson, Niels ; Atodiresei, Nicolae ; Caciuc, Vasile ; Blügel, Stefan ; Rosch, Achim ; Verbitskiy, Nikolay I. ; Hell, Martin ; Evtushinsky, Daniil V. ; German, Raphael ; Marangoni, Tomas ; van Loosdrecht, Paul H.M. ; Fischer, Felix R. ; Grüneis, Alexander. / Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons. в: Advanced Electronic aterials . 2017 ; Том 3, № 4.

BibTeX

@article{511fb33ae5a243ebbc1217388f2aed3c,

title = "Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons",

abstract = "A semiconductor-to-metal transition in N = 7 armchair graphene nanoribbons causes drastic changes in its electron and phonon system. By using angle-resolved photoemission spectroscopy of lithium-doped graphene nanoribbons, a quasiparticle band gap renormalization from 2.4 to 2.1 eV is observed. Reaching high doping levels (0.05 electrons per atom), it is found that the effective mass of the conduction band carriers increases to a value equal to the free electron mass. This giant increase in the effective mass by doping is a means to enhance the density of states at the Fermi level which can have palpable impact on the transport and optical properties. Electron doping also reduces the Raman intensity by one order of magnitude, and results in relatively small (4 cm−1) hardening of the G phonon and softening of the D phonon. This suggests the importance of both lattice expansion and dynamic effects. The present work highlights that doping of a semiconducting 1D system is strikingly different from its 2D or 3D counterparts and introduces doped graphene nanoribbons as a new tunable quantum material with high potential for basic research and applications.",

keywords = "ARPES, charge transfer doping, graphene, graphene nanoribbons, Raman",

author = "Senkovskiy, {Boris V.} and Fedorov, {Alexander V.} and Danny Haberer and Mani Farjam and Simonov, {Konstantin A.} and Preobrajenski, {Alexei B.} and Niels M{\aa}rtensson and Nicolae Atodiresei and Vasile Caciuc and Stefan Bl{\"u}gel and Achim Rosch and Verbitskiy, {Nikolay I.} and Martin Hell and Evtushinsky, {Daniil V.} and Raphael German and Tomas Marangoni and {van Loosdrecht}, {Paul H.M.} and Fischer, {Felix R.} and Alexander Gr{\"u}neis",

year = "2017",

month = apr,

day = "1",

doi = "10.1002/aelm.201600490",

language = "English",

volume = "3",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-Blackwell",

number = "4",

}

RIS

TY - JOUR

T1 - Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons

AU - Senkovskiy, Boris V.

AU - Fedorov, Alexander V.

AU - Haberer, Danny

AU - Farjam, Mani

AU - Simonov, Konstantin A.

AU - Preobrajenski, Alexei B.

AU - Mårtensson, Niels

AU - Atodiresei, Nicolae

AU - Caciuc, Vasile

AU - Blügel, Stefan

AU - Rosch, Achim

AU - Verbitskiy, Nikolay I.

AU - Hell, Martin

AU - Evtushinsky, Daniil V.

AU - German, Raphael

AU - Marangoni, Tomas

AU - van Loosdrecht, Paul H.M.

AU - Fischer, Felix R.

AU - Grüneis, Alexander

PY - 2017/4/1

Y1 - 2017/4/1

N2 - A semiconductor-to-metal transition in N = 7 armchair graphene nanoribbons causes drastic changes in its electron and phonon system. By using angle-resolved photoemission spectroscopy of lithium-doped graphene nanoribbons, a quasiparticle band gap renormalization from 2.4 to 2.1 eV is observed. Reaching high doping levels (0.05 electrons per atom), it is found that the effective mass of the conduction band carriers increases to a value equal to the free electron mass. This giant increase in the effective mass by doping is a means to enhance the density of states at the Fermi level which can have palpable impact on the transport and optical properties. Electron doping also reduces the Raman intensity by one order of magnitude, and results in relatively small (4 cm−1) hardening of the G phonon and softening of the D phonon. This suggests the importance of both lattice expansion and dynamic effects. The present work highlights that doping of a semiconducting 1D system is strikingly different from its 2D or 3D counterparts and introduces doped graphene nanoribbons as a new tunable quantum material with high potential for basic research and applications.

AB - A semiconductor-to-metal transition in N = 7 armchair graphene nanoribbons causes drastic changes in its electron and phonon system. By using angle-resolved photoemission spectroscopy of lithium-doped graphene nanoribbons, a quasiparticle band gap renormalization from 2.4 to 2.1 eV is observed. Reaching high doping levels (0.05 electrons per atom), it is found that the effective mass of the conduction band carriers increases to a value equal to the free electron mass. This giant increase in the effective mass by doping is a means to enhance the density of states at the Fermi level which can have palpable impact on the transport and optical properties. Electron doping also reduces the Raman intensity by one order of magnitude, and results in relatively small (4 cm−1) hardening of the G phonon and softening of the D phonon. This suggests the importance of both lattice expansion and dynamic effects. The present work highlights that doping of a semiconducting 1D system is strikingly different from its 2D or 3D counterparts and introduces doped graphene nanoribbons as a new tunable quantum material with high potential for basic research and applications.

KW - ARPES

KW - charge transfer doping

KW - graphene

KW - graphene nanoribbons

KW - Raman

UR - http://www.scopus.com/inward/record.url?scp=85014858366&partnerID=8YFLogxK

U2 - 10.1002/aelm.201600490

DO - 10.1002/aelm.201600490

M3 - Article

AN - SCOPUS:85014858366

VL - 3

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 4

M1 - 1600490

ER -

ID: 9225824