Standard

Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo1-xNixSb semiconductor alloy is varied. Donor impurities. / Romaka, V. A.; Shelyapina, M. G.; Stadnyk, Yu V.; Fruchart, D.; Romaka, L. P.; Chekurin, V. F.

в: Semiconductors, Том 40, № 7, 07.2006, стр. 776-780.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Romaka, VA, Shelyapina, MG, Stadnyk, YV, Fruchart, D, Romaka, LP & Chekurin, VF 2006, 'Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo1-xNixSb semiconductor alloy is varied. Donor impurities', Semiconductors, Том. 40, № 7, стр. 776-780. https://doi.org/10.1134/S1063782606070074

APA

Romaka, V. A., Shelyapina, M. G., Stadnyk, Y. V., Fruchart, D., Romaka, L. P., & Chekurin, V. F. (2006). Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo1-xNixSb semiconductor alloy is varied. Donor impurities. Semiconductors, 40(7), 776-780. https://doi.org/10.1134/S1063782606070074

Vancouver

Romaka VA, Shelyapina MG, Stadnyk YV, Fruchart D, Romaka LP, Chekurin VF. Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo1-xNixSb semiconductor alloy is varied. Donor impurities. Semiconductors. 2006 Июль;40(7):776-780. https://doi.org/10.1134/S1063782606070074

Author

Romaka, V. A. ; Shelyapina, M. G. ; Stadnyk, Yu V. ; Fruchart, D. ; Romaka, L. P. ; Chekurin, V. F. / Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo1-xNixSb semiconductor alloy is varied. Donor impurities. в: Semiconductors. 2006 ; Том 40, № 7. стр. 776-780.

BibTeX

@article{f5dd9abc4b054d2db7c5e65e5bb63a40,
title = "Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo1-xNixSb semiconductor alloy is varied. Donor impurities",
abstract = "The role of the impurity donor band in the conductivity of the heavily doped and compensated intermetallic TiCoSb semiconductor is determined. The electronic structure of the TiCo1-x NixSb semiconductor alloy is calculated. A model of impurity band transformation in the TiCoSb semiconductor due to donor impurity doping is suggested. The transition from activated to metallic conductivity when varying the TiCo1-x Ni xSb alloy composition is detected, which we identify with the Anderson transition.",
author = "Romaka, {V. A.} and Shelyapina, {M. G.} and Stadnyk, {Yu V.} and D. Fruchart and Romaka, {L. P.} and Chekurin, {V. F.}",
year = "2006",
month = jul,
doi = "10.1134/S1063782606070074",
language = "English",
volume = "40",
pages = "776--780",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "7",

}

RIS

TY - JOUR

T1 - Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo1-xNixSb semiconductor alloy is varied. Donor impurities

AU - Romaka, V. A.

AU - Shelyapina, M. G.

AU - Stadnyk, Yu V.

AU - Fruchart, D.

AU - Romaka, L. P.

AU - Chekurin, V. F.

PY - 2006/7

Y1 - 2006/7

N2 - The role of the impurity donor band in the conductivity of the heavily doped and compensated intermetallic TiCoSb semiconductor is determined. The electronic structure of the TiCo1-x NixSb semiconductor alloy is calculated. A model of impurity band transformation in the TiCoSb semiconductor due to donor impurity doping is suggested. The transition from activated to metallic conductivity when varying the TiCo1-x Ni xSb alloy composition is detected, which we identify with the Anderson transition.

AB - The role of the impurity donor band in the conductivity of the heavily doped and compensated intermetallic TiCoSb semiconductor is determined. The electronic structure of the TiCo1-x NixSb semiconductor alloy is calculated. A model of impurity band transformation in the TiCoSb semiconductor due to donor impurity doping is suggested. The transition from activated to metallic conductivity when varying the TiCo1-x Ni xSb alloy composition is detected, which we identify with the Anderson transition.

UR - http://www.scopus.com/inward/record.url?scp=33745522125&partnerID=8YFLogxK

U2 - 10.1134/S1063782606070074

DO - 10.1134/S1063782606070074

M3 - Article

AN - SCOPUS:33745522125

VL - 40

SP - 776

EP - 780

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 7

ER -

ID: 16796823