Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers

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Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers. / Vdovin, V.I.; Ubyivovk, E.V.; Vyvenko, O.F.

в: Semiconductors, Том 47, № 2, 2013, стр. 264-268.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{a22ea9de9dda42b486129c294ee7cab4,

title = "Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers",

abstract = "The dislocation networks in structures with hydrophilically bonded Si (001) wafers are investigated by transmission electron microscopy. Networks with differing geometry and type of dominant dislocations are observed. One type of networks, which is typical of bonded structures, is formed on the basis of a square network of screw dislocations and contains a system of unidirectional 60° zigzag-shaped dislocations. It is established that such dislocation networks are flat in structures with an azimuthal misorientation of wafers exceeding 2°, whereas they are three-dimensional at smaller misorientation angles. A unique network of another type is formed only by 60° dislocations, the majority of which are extended along one direction, which does not coincide with the 〈110〉 directions in the boundary plane and has a number of specific features, the explanation of which is impossible within the framework of conventional representations.",

author = "V.I. Vdovin and E.V. Ubyivovk and O.F. Vyvenko",

year = "2013",

doi = "10.1134/S106378261302022X",

language = "English",

volume = "47",

pages = "264--268",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "2",

}

RIS

TY - JOUR

T1 - Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers

AU - Vdovin, V.I.

AU - Ubyivovk, E.V.

AU - Vyvenko, O.F.

PY - 2013

Y1 - 2013

N2 - The dislocation networks in structures with hydrophilically bonded Si (001) wafers are investigated by transmission electron microscopy. Networks with differing geometry and type of dominant dislocations are observed. One type of networks, which is typical of bonded structures, is formed on the basis of a square network of screw dislocations and contains a system of unidirectional 60° zigzag-shaped dislocations. It is established that such dislocation networks are flat in structures with an azimuthal misorientation of wafers exceeding 2°, whereas they are three-dimensional at smaller misorientation angles. A unique network of another type is formed only by 60° dislocations, the majority of which are extended along one direction, which does not coincide with the 〈110〉 directions in the boundary plane and has a number of specific features, the explanation of which is impossible within the framework of conventional representations.

AB - The dislocation networks in structures with hydrophilically bonded Si (001) wafers are investigated by transmission electron microscopy. Networks with differing geometry and type of dominant dislocations are observed. One type of networks, which is typical of bonded structures, is formed on the basis of a square network of screw dislocations and contains a system of unidirectional 60° zigzag-shaped dislocations. It is established that such dislocation networks are flat in structures with an azimuthal misorientation of wafers exceeding 2°, whereas they are three-dimensional at smaller misorientation angles. A unique network of another type is formed only by 60° dislocations, the majority of which are extended along one direction, which does not coincide with the 〈110〉 directions in the boundary plane and has a number of specific features, the explanation of which is impossible within the framework of conventional representations.

U2 - 10.1134/S106378261302022X

DO - 10.1134/S106378261302022X

M3 - Article

VL - 47

SP - 264

EP - 268

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 5669667