Standard

Recombination activity and electrical levels of "clean" and copper contaminated dislocations in p-type Si. / Vyvenko, O. F.; Kittler, M.; Seifert, W.; Trushin, M. V.

в: Physica Status Solidi C: Conferences, Том 2, № 6, 2005, стр. 1852-1858.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Vyvenko, OF, Kittler, M, Seifert, W & Trushin, MV 2005, 'Recombination activity and electrical levels of "clean" and copper contaminated dislocations in p-type Si', Physica Status Solidi C: Conferences, Том. 2, № 6, стр. 1852-1858. https://doi.org/10.1002/pssc.200460517

APA

Vyvenko, O. F., Kittler, M., Seifert, W., & Trushin, M. V. (2005). Recombination activity and electrical levels of "clean" and copper contaminated dislocations in p-type Si. Physica Status Solidi C: Conferences, 2(6), 1852-1858. https://doi.org/10.1002/pssc.200460517

Vancouver

Vyvenko OF, Kittler M, Seifert W, Trushin MV. Recombination activity and electrical levels of "clean" and copper contaminated dislocations in p-type Si. Physica Status Solidi C: Conferences. 2005;2(6):1852-1858. https://doi.org/10.1002/pssc.200460517

Author

Vyvenko, O. F. ; Kittler, M. ; Seifert, W. ; Trushin, M. V. / Recombination activity and electrical levels of "clean" and copper contaminated dislocations in p-type Si. в: Physica Status Solidi C: Conferences. 2005 ; Том 2, № 6. стр. 1852-1858.

BibTeX

@article{424eead50eb349f7a3964939bd26c78d,
title = "Recombination activity and electrical levels of {"}clean{"} and copper contaminated dislocations in p-type Si",
abstract = "Deep levels, associated with misfit dislocations in {"}clean{"} and copper contaminated p-type Si/Si0.98Ge0.02/Si structures, are under consideration. In the as-grown (non-contaminated) samples dislocations were found to exhibit a very low recombination activity, detectable with the electron-beam-induced current technique only at low temperatures. Deep-level-transient spectroscopy revealed a dislocation-related hole trap level at Et = Ev + 0.2 eV which was identified as band-like. The position of the observed level is close to the theoretically predicted hole trap state of the intrinsic stacking fault between a dissociated dislocation. Contamination with a low copper concentration (5 ppb) gave rise to a large increase of the recombination activity of the dislocations and to the appearance of another dislocation-related defect level at Et= Ev+ 0.32 eV. Hydrogenation of the copper contaminated sample by a treatment with an acid solution and subsequent reverse-bias anneal at 380 K resulted in the evolution of the levels of substitutional copper and its complexes with hydrogen.",
author = "Vyvenko, {O. F.} and M. Kittler and W. Seifert and Trushin, {M. V.}",
year = "2005",
doi = "10.1002/pssc.200460517",
language = "English",
volume = "2",
pages = "1852--1858",
journal = "Physica Status Solidi C: Conferences",
issn = "1862-6351",
publisher = "Wiley-Blackwell",
number = "6",

}

RIS

TY - JOUR

T1 - Recombination activity and electrical levels of "clean" and copper contaminated dislocations in p-type Si

AU - Vyvenko, O. F.

AU - Kittler, M.

AU - Seifert, W.

AU - Trushin, M. V.

PY - 2005

Y1 - 2005

N2 - Deep levels, associated with misfit dislocations in "clean" and copper contaminated p-type Si/Si0.98Ge0.02/Si structures, are under consideration. In the as-grown (non-contaminated) samples dislocations were found to exhibit a very low recombination activity, detectable with the electron-beam-induced current technique only at low temperatures. Deep-level-transient spectroscopy revealed a dislocation-related hole trap level at Et = Ev + 0.2 eV which was identified as band-like. The position of the observed level is close to the theoretically predicted hole trap state of the intrinsic stacking fault between a dissociated dislocation. Contamination with a low copper concentration (5 ppb) gave rise to a large increase of the recombination activity of the dislocations and to the appearance of another dislocation-related defect level at Et= Ev+ 0.32 eV. Hydrogenation of the copper contaminated sample by a treatment with an acid solution and subsequent reverse-bias anneal at 380 K resulted in the evolution of the levels of substitutional copper and its complexes with hydrogen.

AB - Deep levels, associated with misfit dislocations in "clean" and copper contaminated p-type Si/Si0.98Ge0.02/Si structures, are under consideration. In the as-grown (non-contaminated) samples dislocations were found to exhibit a very low recombination activity, detectable with the electron-beam-induced current technique only at low temperatures. Deep-level-transient spectroscopy revealed a dislocation-related hole trap level at Et = Ev + 0.2 eV which was identified as band-like. The position of the observed level is close to the theoretically predicted hole trap state of the intrinsic stacking fault between a dissociated dislocation. Contamination with a low copper concentration (5 ppb) gave rise to a large increase of the recombination activity of the dislocations and to the appearance of another dislocation-related defect level at Et= Ev+ 0.32 eV. Hydrogenation of the copper contaminated sample by a treatment with an acid solution and subsequent reverse-bias anneal at 380 K resulted in the evolution of the levels of substitutional copper and its complexes with hydrogen.

UR - http://www.scopus.com/inward/record.url?scp=27444432559&partnerID=8YFLogxK

U2 - 10.1002/pssc.200460517

DO - 10.1002/pssc.200460517

M3 - Article

AN - SCOPUS:27444432559

VL - 2

SP - 1852

EP - 1858

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 6

ER -

ID: 87674668