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Raman spectroscopy estimation of the carrier concentration and the value of strain in monolayer graphene films grown on 4H-SiC. / Eliseyev, I. A.; Davydov, V. Yu; Smirnov, A. N.; Nestoklon, M. O.; Dementev, P. A.; Lebedev, S. P.; Lebedev, A. A.; Bokai, K. A.; Usachov, D. Yu.

в: Journal of Physics: Conference Series, Том 1400, № 5, 055037, 11.12.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Eliseyev, IA, Davydov, VY, Smirnov, AN, Nestoklon, MO, Dementev, PA, Lebedev, SP, Lebedev, AA, Bokai, KA & Usachov, DY 2019, 'Raman spectroscopy estimation of the carrier concentration and the value of strain in monolayer graphene films grown on 4H-SiC', Journal of Physics: Conference Series, Том. 1400, № 5, 055037. https://doi.org/10.1088/1742-6596/1400/5/055037

APA

Eliseyev, I. A., Davydov, V. Y., Smirnov, A. N., Nestoklon, M. O., Dementev, P. A., Lebedev, S. P., Lebedev, A. A., Bokai, K. A., & Usachov, D. Y. (2019). Raman spectroscopy estimation of the carrier concentration and the value of strain in monolayer graphene films grown on 4H-SiC. Journal of Physics: Conference Series, 1400(5), [055037]. https://doi.org/10.1088/1742-6596/1400/5/055037

Vancouver

Eliseyev IA, Davydov VY, Smirnov AN, Nestoklon MO, Dementev PA, Lebedev SP и пр. Raman spectroscopy estimation of the carrier concentration and the value of strain in monolayer graphene films grown on 4H-SiC. Journal of Physics: Conference Series. 2019 Дек. 11;1400(5). 055037. https://doi.org/10.1088/1742-6596/1400/5/055037

Author

Eliseyev, I. A. ; Davydov, V. Yu ; Smirnov, A. N. ; Nestoklon, M. O. ; Dementev, P. A. ; Lebedev, S. P. ; Lebedev, A. A. ; Bokai, K. A. ; Usachov, D. Yu. / Raman spectroscopy estimation of the carrier concentration and the value of strain in monolayer graphene films grown on 4H-SiC. в: Journal of Physics: Conference Series. 2019 ; Том 1400, № 5.

BibTeX

@article{d352541b9c4541d0afda9ae8967c234d,
title = "Raman spectroscopy estimation of the carrier concentration and the value of strain in monolayer graphene films grown on 4H-SiC",
abstract = "Comprehensive study of high-quality monolayer graphene samples grown by thermal destruction of the Si-face of the 4H-SiC substrate was carried out. Analysis of the data obtained by Raman spectroscopy and angle-resolved photoemission spectroscopy suggest the need to use the Fermi velocity in the graphene layer under study to obtain a correct estimate of the electron concentration and strain values using Raman data. This statement is valid not only for graphene on the SiC substrate, but for graphene on any other substrate as well, since the Fermi velocity in graphene depends on the dielectric constant of the substrate.",
author = "Eliseyev, {I. A.} and Davydov, {V. Yu} and Smirnov, {A. N.} and Nestoklon, {M. O.} and Dementev, {P. A.} and Lebedev, {S. P.} and Lebedev, {A. A.} and Bokai, {K. A.} and Usachov, {D. Yu}",
year = "2019",
month = dec,
day = "11",
doi = "10.1088/1742-6596/1400/5/055037",
language = "English",
volume = "1400",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "5",
note = "International Conference PhysicA.SPb 2019 ; Conference date: 22-10-2019 Through 24-10-2019",

}

RIS

TY - JOUR

T1 - Raman spectroscopy estimation of the carrier concentration and the value of strain in monolayer graphene films grown on 4H-SiC

AU - Eliseyev, I. A.

AU - Davydov, V. Yu

AU - Smirnov, A. N.

AU - Nestoklon, M. O.

AU - Dementev, P. A.

AU - Lebedev, S. P.

AU - Lebedev, A. A.

AU - Bokai, K. A.

AU - Usachov, D. Yu

PY - 2019/12/11

Y1 - 2019/12/11

N2 - Comprehensive study of high-quality monolayer graphene samples grown by thermal destruction of the Si-face of the 4H-SiC substrate was carried out. Analysis of the data obtained by Raman spectroscopy and angle-resolved photoemission spectroscopy suggest the need to use the Fermi velocity in the graphene layer under study to obtain a correct estimate of the electron concentration and strain values using Raman data. This statement is valid not only for graphene on the SiC substrate, but for graphene on any other substrate as well, since the Fermi velocity in graphene depends on the dielectric constant of the substrate.

AB - Comprehensive study of high-quality monolayer graphene samples grown by thermal destruction of the Si-face of the 4H-SiC substrate was carried out. Analysis of the data obtained by Raman spectroscopy and angle-resolved photoemission spectroscopy suggest the need to use the Fermi velocity in the graphene layer under study to obtain a correct estimate of the electron concentration and strain values using Raman data. This statement is valid not only for graphene on the SiC substrate, but for graphene on any other substrate as well, since the Fermi velocity in graphene depends on the dielectric constant of the substrate.

UR - http://www.scopus.com/inward/record.url?scp=85077565430&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1400/5/055037

DO - 10.1088/1742-6596/1400/5/055037

M3 - Conference article

AN - SCOPUS:85077565430

VL - 1400

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 5

M1 - 055037

T2 - International Conference PhysicA.SPb 2019

Y2 - 22 October 2019 through 24 October 2019

ER -

ID: 53965266