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Radiative recombination in Zn1-x MnxTe/Zn 0.59Mg0.41Te quantum well structures : Exciton emission and intracenter luminescence. / Agekyan, V. F.; Vasil'ev, N. N.; Serov, A. Yu; Stepanov, Yu A.; Tazaev, U. V.; Filosofov, N. G.; Karczewski, G.

в: Semiconductors, Том 40, № 1, 01.01.2006, стр. 67-71.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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Author

Agekyan, V. F. ; Vasil'ev, N. N. ; Serov, A. Yu ; Stepanov, Yu A. ; Tazaev, U. V. ; Filosofov, N. G. ; Karczewski, G. / Radiative recombination in Zn1-x MnxTe/Zn 0.59Mg0.41Te quantum well structures : Exciton emission and intracenter luminescence. в: Semiconductors. 2006 ; Том 40, № 1. стр. 67-71.

BibTeX

@article{6346d2b88feb4096aa99dca78a9bc446,
title = "Radiative recombination in Zn1-x MnxTe/Zn 0.59Mg0.41Te quantum well structures: Exciton emission and intracenter luminescence",
abstract = "The luminescence spectra controlled by excitons and intracenter 3d emission of Mn2+ ions are studied for a series of Zn1-x Mn xTe/Zn0.59Mg0.41 Te quantum well (QW) structures that differ in manganese content and QW width. It is shown that the relative intensities of exciton emission of the QWs and barriers and the dependences of the intensities on the optical excitation level are controlled mainly by the manganese content in the QWs that affect the efficiency of excitons transfer of to the 3d shell of the Mn2+ ions. The effects of QW width and manganese content on the decay kinetics of the intracenter luminescence of the Mn2+ ions are studied.",
author = "Agekyan, {V. F.} and Vasil'ev, {N. N.} and Serov, {A. Yu} and Stepanov, {Yu A.} and Tazaev, {U. V.} and Filosofov, {N. G.} and G. Karczewski",
year = "2006",
month = jan,
day = "1",
doi = "10.1134/S106378260601012X",
language = "English",
volume = "40",
pages = "67--71",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "1",

}

RIS

TY - JOUR

T1 - Radiative recombination in Zn1-x MnxTe/Zn 0.59Mg0.41Te quantum well structures

T2 - Exciton emission and intracenter luminescence

AU - Agekyan, V. F.

AU - Vasil'ev, N. N.

AU - Serov, A. Yu

AU - Stepanov, Yu A.

AU - Tazaev, U. V.

AU - Filosofov, N. G.

AU - Karczewski, G.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - The luminescence spectra controlled by excitons and intracenter 3d emission of Mn2+ ions are studied for a series of Zn1-x Mn xTe/Zn0.59Mg0.41 Te quantum well (QW) structures that differ in manganese content and QW width. It is shown that the relative intensities of exciton emission of the QWs and barriers and the dependences of the intensities on the optical excitation level are controlled mainly by the manganese content in the QWs that affect the efficiency of excitons transfer of to the 3d shell of the Mn2+ ions. The effects of QW width and manganese content on the decay kinetics of the intracenter luminescence of the Mn2+ ions are studied.

AB - The luminescence spectra controlled by excitons and intracenter 3d emission of Mn2+ ions are studied for a series of Zn1-x Mn xTe/Zn0.59Mg0.41 Te quantum well (QW) structures that differ in manganese content and QW width. It is shown that the relative intensities of exciton emission of the QWs and barriers and the dependences of the intensities on the optical excitation level are controlled mainly by the manganese content in the QWs that affect the efficiency of excitons transfer of to the 3d shell of the Mn2+ ions. The effects of QW width and manganese content on the decay kinetics of the intracenter luminescence of the Mn2+ ions are studied.

UR - http://www.scopus.com/inward/record.url?scp=33644667305&partnerID=8YFLogxK

U2 - 10.1134/S106378260601012X

DO - 10.1134/S106378260601012X

M3 - Article

AN - SCOPUS:33644667305

VL - 40

SP - 67

EP - 71

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 1

ER -

ID: 36149368