TY - JOUR

T1 - Radiative recombination in the CdMgTe matrix with ultrathin narrow-gap CdMnTe layers

AU - Agekyan, V. F.

AU - Serov, A. Yu

AU - Stepanov, Yu A.

AU - Filosofov, N. G.

AU - Bembitov, D. B.

AU - Karczewski, G.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Exitonic emission from three structures consisting of CdMnTe layers separated by thick wide-gap CdMgTe layers are studied in the temperature range from 13 to 300 K. The thickness of the CdMnTe layers corresponds to the 0.5, 1.5, and 3.0 monolayers. To calculate the excitonic density -of-state spectra in these structures, a simple model that takes into account variations in the elemental composition of the alloy inside the exciton sphere under variations in its position with respect to the narrow-gap layer is used. It is shown that the energy extent of the emission and density -of-state spectra and the positions of the characteristic features of the spectra are in agreement. On low-intensity excitation (1-10 W/cm2), heating of the samples from 13 K yields a relative decrease in the emission intensity of excitions localized in the CdMgTe layers, so that this emission at 80 K is much lower in intensity than the emission of excitions bound at the narrow-gap layers. In the conditions of high-intensity excitation (103-105 W/cm2) at 80 K, the excitonic emission from the CdMgTe layers prevails; however, at room temperature, the emission from the narrow-gap layers dominates over the emission from the wide-gap layers. The intracenter luminescence of the Mn2+ ions in the sample with three monolayers CdMnTe presents a doublet structure, with the components corresponding to the internal and external layers of the three-layer planar inclusions containing manganese.

AB - Exitonic emission from three structures consisting of CdMnTe layers separated by thick wide-gap CdMgTe layers are studied in the temperature range from 13 to 300 K. The thickness of the CdMnTe layers corresponds to the 0.5, 1.5, and 3.0 monolayers. To calculate the excitonic density -of-state spectra in these structures, a simple model that takes into account variations in the elemental composition of the alloy inside the exciton sphere under variations in its position with respect to the narrow-gap layer is used. It is shown that the energy extent of the emission and density -of-state spectra and the positions of the characteristic features of the spectra are in agreement. On low-intensity excitation (1-10 W/cm2), heating of the samples from 13 K yields a relative decrease in the emission intensity of excitions localized in the CdMgTe layers, so that this emission at 80 K is much lower in intensity than the emission of excitions bound at the narrow-gap layers. In the conditions of high-intensity excitation (103-105 W/cm2) at 80 K, the excitonic emission from the CdMgTe layers prevails; however, at room temperature, the emission from the narrow-gap layers dominates over the emission from the wide-gap layers. The intracenter luminescence of the Mn2+ ions in the sample with three monolayers CdMnTe presents a doublet structure, with the components corresponding to the internal and external layers of the three-layer planar inclusions containing manganese.

UR - http://www.scopus.com/inward/record.url?scp=58449121386&partnerID=8YFLogxK

U2 - 10.1134/S1063782609010126

DO - 10.1134/S1063782609010126

M3 - Article

AN - SCOPUS:58449121386

VL - 43

SP - 57

EP - 62

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 1

ER -