Quantum Interference Effect on Exciton Transport in Monolayer Semiconductors

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Quantum Interference Effect on Exciton Transport in Monolayer Semiconductors. / Glazov, M. M.

в: Physical Review Letters, Том 124, № 16, 166802, 24.04.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{1b44d29ce4234c46881f30acd1a93bb3,

title = "Quantum Interference Effect on Exciton Transport in Monolayer Semiconductors",

abstract = "We study theoretically weak localization of excitons in atomically thin transition metal dichalcogenides. The constructive interference of excitonic de Broglie waves on the trajectories forming closed loops results in a decrease of the exciton diffusion coefficient. We calculate the interference contribution to the diffusion coefficient for the experimentally relevant situation of exciton scattering by acoustic phonons and static disorder. For the acoustic phonon scattering, the quantum interference becomes more and more important with increasing the temperature. Our estimates show that the quantum contribution to the diffusion coefficient is considerable for the state-of-the-art monolayer and bilayer transition metal dichalcogenides.",

keywords = "WEAK-LOCALIZATION, PHONON-WIND, CONDUCTIVITY, ELECTRONS, CU2O",

author = "Glazov, {M. M.}",

note = "Publisher Copyright: {\textcopyright} 2020 American Physical Society. {\textcopyright} 2020 American Physical Society.",

year = "2020",

month = apr,

day = "24",

doi = "10.1103/PhysRevLett.124.166802",

language = "English",

volume = "124",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "16",

}

RIS

TY - JOUR

T1 - Quantum Interference Effect on Exciton Transport in Monolayer Semiconductors

AU - Glazov, M. M.

PY - 2020/4/24

Y1 - 2020/4/24

N2 - We study theoretically weak localization of excitons in atomically thin transition metal dichalcogenides. The constructive interference of excitonic de Broglie waves on the trajectories forming closed loops results in a decrease of the exciton diffusion coefficient. We calculate the interference contribution to the diffusion coefficient for the experimentally relevant situation of exciton scattering by acoustic phonons and static disorder. For the acoustic phonon scattering, the quantum interference becomes more and more important with increasing the temperature. Our estimates show that the quantum contribution to the diffusion coefficient is considerable for the state-of-the-art monolayer and bilayer transition metal dichalcogenides.

AB - We study theoretically weak localization of excitons in atomically thin transition metal dichalcogenides. The constructive interference of excitonic de Broglie waves on the trajectories forming closed loops results in a decrease of the exciton diffusion coefficient. We calculate the interference contribution to the diffusion coefficient for the experimentally relevant situation of exciton scattering by acoustic phonons and static disorder. For the acoustic phonon scattering, the quantum interference becomes more and more important with increasing the temperature. Our estimates show that the quantum contribution to the diffusion coefficient is considerable for the state-of-the-art monolayer and bilayer transition metal dichalcogenides.

KW - WEAK-LOCALIZATION

KW - PHONON-WIND

KW - CONDUCTIVITY

KW - ELECTRONS

KW - CU2O

UR - http://www.scopus.com/inward/record.url?scp=85084720785&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.124.166802

DO - 10.1103/PhysRevLett.124.166802

M3 - Article

C2 - 32383933

VL - 124

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 16

M1 - 166802

ER -

ID: 53502778

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