The Cr2O3-NiO mixed oxides thin films were formed by means of the layer-by-layer magnetron sputtering deposition of Cr2O3, NiO and Cr2O3 layers on c-plane sapphire substrate. These thin-film structures, subjected to subsequent annealing, constituted a combination of the monocrystalline (0001) Cr2O3 and non-ordered nickel oxide phase, being was a mixture of NiO and Ni2O3. The annealing at 900 °C and 1000 °C in air facilitated the diffusion of Ni and Cr atoms into the layers. Varying the annealing time allowed to control the uniformity of the Ni and Cr distribution, the microrelief of the film surface, the transmittance in the visible region and the sheet resistance of the Cr2O3-NiO thin-film structures. Thus, the films annealed at 900 °C during 30 min were characterized by a uniform distribution, a relatively weakly developed surface, the low sheet resistance and the highest Haacke's Figure of Merit of 1.49 × 10–9 Ohm–1. The formation of a mixed Cr2O3-NiO oxides by the proposed approach was found to be an effective way to improve the performances of Cr2O3 based p-type transparent conductive electrodes.