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Possible experimental realization of a basic Z2 topological semimetal in GaGeTe. / Haubold, Erik; Fedorov, Alexander; F. Pielnhofer, Florian; Rusinov, Igor; Menshchikova, Tatiana V. ; Duppel, Viola; Friedrich, Daniel ; Weihrich, Richard ; Pfitzner, Arno ; Zeugner, Alexander ; Isaeva, Anna ; Thirupathaiah, Setti ; Kushnirenko, Yevhen ; Rienks, Emile ; Kim, Timur ; Chulkov, Evgueni V. ; Büchner, Bernd ; Borisenko, Sergey .

в: APL Materials, Том 7, № 12, 121106, 01.12.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Haubold, E, Fedorov, A, F. Pielnhofer, F, Rusinov, I, Menshchikova, TV, Duppel, V, Friedrich, D, Weihrich, R, Pfitzner, A, Zeugner, A, Isaeva, A, Thirupathaiah, S, Kushnirenko, Y, Rienks, E, Kim, T, Chulkov, EV, Büchner, B & Borisenko, S 2019, 'Possible experimental realization of a basic Z2 topological semimetal in GaGeTe', APL Materials, Том. 7, № 12, 121106. https://doi.org/10.1063/1.5124563

APA

Haubold, E., Fedorov, A., F. Pielnhofer, F., Rusinov, I., Menshchikova, T. V., Duppel, V., Friedrich, D., Weihrich, R., Pfitzner, A., Zeugner, A., Isaeva, A., Thirupathaiah, S., Kushnirenko, Y., Rienks, E., Kim, T., Chulkov, E. V., Büchner, B., & Borisenko, S. (2019). Possible experimental realization of a basic Z2 topological semimetal in GaGeTe. APL Materials, 7(12), [121106]. https://doi.org/10.1063/1.5124563

Vancouver

Haubold E, Fedorov A, F. Pielnhofer F, Rusinov I, Menshchikova TV, Duppel V и пр. Possible experimental realization of a basic Z2 topological semimetal in GaGeTe. APL Materials. 2019 Дек. 1;7(12). 121106. https://doi.org/10.1063/1.5124563

Author

Haubold, Erik ; Fedorov, Alexander ; F. Pielnhofer, Florian ; Rusinov, Igor ; Menshchikova, Tatiana V. ; Duppel, Viola ; Friedrich, Daniel ; Weihrich, Richard ; Pfitzner, Arno ; Zeugner, Alexander ; Isaeva, Anna ; Thirupathaiah, Setti ; Kushnirenko, Yevhen ; Rienks, Emile ; Kim, Timur ; Chulkov, Evgueni V. ; Büchner, Bernd ; Borisenko, Sergey . / Possible experimental realization of a basic Z2 topological semimetal in GaGeTe. в: APL Materials. 2019 ; Том 7, № 12.

BibTeX

@article{558de879d59b434da497131e08a77499,
title = "Possible experimental realization of a basic Z2 topological semimetal in GaGeTe",
abstract = "We report experimental and theoretical evidence that GaGeTe is a basic Z2 topological semimetal with three types of charge carriers: bulkoriginated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the classic 3D topologicalinsulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-resolution angle-resolvedphotoemission spectroscopy combined with advanced band structure calculations show a small indirect energy gap caused by a peculiarband inversion at the T-point of the Brillouin zone in GaGeTe. An energy overlap of the valence and conduction bands brings both electronand holelike carriers to the Fermi level, while the momentum gap between the corresponding dispersions remains finite. We argue thatpeculiarities of the electronic spectrum of GaGeTe have a fundamental importance for the physics of topological matter and may boost thematerial{\textquoteright}s application potential.",
author = "Erik Haubold and Alexander Fedorov and {F. Pielnhofer}, Florian and Igor Rusinov and Menshchikova, {Tatiana V.} and Viola Duppel and Daniel Friedrich and Richard Weihrich and Arno Pfitzner and Alexander Zeugner and Anna Isaeva and Setti Thirupathaiah and Yevhen Kushnirenko and Emile Rienks and Timur Kim and Chulkov, {Evgueni V.} and Bernd B{\"u}chner and Sergey Borisenko",
note = "Publisher Copyright: {\textcopyright} 2019 Author(s).",
year = "2019",
month = dec,
day = "1",
doi = "10.1063/1.5124563",
language = "English",
volume = "7",
journal = "APL Materials",
issn = "2166-532X",
publisher = "American Institute of Physics",
number = "12",

}

RIS

TY - JOUR

T1 - Possible experimental realization of a basic Z2 topological semimetal in GaGeTe

AU - Haubold, Erik

AU - Fedorov, Alexander

AU - F. Pielnhofer, Florian

AU - Rusinov, Igor

AU - Menshchikova, Tatiana V.

AU - Duppel, Viola

AU - Friedrich, Daniel

AU - Weihrich, Richard

AU - Pfitzner, Arno

AU - Zeugner, Alexander

AU - Isaeva, Anna

AU - Thirupathaiah, Setti

AU - Kushnirenko, Yevhen

AU - Rienks, Emile

AU - Kim, Timur

AU - Chulkov, Evgueni V.

AU - Büchner, Bernd

AU - Borisenko, Sergey

N1 - Publisher Copyright: © 2019 Author(s).

PY - 2019/12/1

Y1 - 2019/12/1

N2 - We report experimental and theoretical evidence that GaGeTe is a basic Z2 topological semimetal with three types of charge carriers: bulkoriginated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the classic 3D topologicalinsulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-resolution angle-resolvedphotoemission spectroscopy combined with advanced band structure calculations show a small indirect energy gap caused by a peculiarband inversion at the T-point of the Brillouin zone in GaGeTe. An energy overlap of the valence and conduction bands brings both electronand holelike carriers to the Fermi level, while the momentum gap between the corresponding dispersions remains finite. We argue thatpeculiarities of the electronic spectrum of GaGeTe have a fundamental importance for the physics of topological matter and may boost thematerial’s application potential.

AB - We report experimental and theoretical evidence that GaGeTe is a basic Z2 topological semimetal with three types of charge carriers: bulkoriginated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the classic 3D topologicalinsulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-resolution angle-resolvedphotoemission spectroscopy combined with advanced band structure calculations show a small indirect energy gap caused by a peculiarband inversion at the T-point of the Brillouin zone in GaGeTe. An energy overlap of the valence and conduction bands brings both electronand holelike carriers to the Fermi level, while the momentum gap between the corresponding dispersions remains finite. We argue thatpeculiarities of the electronic spectrum of GaGeTe have a fundamental importance for the physics of topological matter and may boost thematerial’s application potential.

UR - http://www.scopus.com/inward/record.url?scp=85076691529&partnerID=8YFLogxK

UR - http://www.mendeley.com/research/possible-experimental-realization-basic-z-2-topological-semimetal-gagete

U2 - 10.1063/1.5124563

DO - 10.1063/1.5124563

M3 - Article

VL - 7

JO - APL Materials

JF - APL Materials

SN - 2166-532X

IS - 12

M1 - 121106

ER -

ID: 49666981