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Polyaniline-based memristive microdevice with high switching rate and endurance. / Lapkin, D. A.; Emelyanov, A. V.; Demin, V. A.; Erokhin, V. V.; Feigin, L. A.; Kashkarov, P. K.; Kovalchuk, M. V.

в: Applied Physics Letters, Том 112, № 4, 043302, 22.01.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Lapkin, DA, Emelyanov, AV, Demin, VA, Erokhin, VV, Feigin, LA, Kashkarov, PK & Kovalchuk, MV 2018, 'Polyaniline-based memristive microdevice with high switching rate and endurance', Applied Physics Letters, Том. 112, № 4, 043302. https://doi.org/10.1063/1.5013929

APA

Lapkin, D. A., Emelyanov, A. V., Demin, V. A., Erokhin, V. V., Feigin, L. A., Kashkarov, P. K., & Kovalchuk, M. V. (2018). Polyaniline-based memristive microdevice with high switching rate and endurance. Applied Physics Letters, 112(4), [043302]. https://doi.org/10.1063/1.5013929

Vancouver

Lapkin DA, Emelyanov AV, Demin VA, Erokhin VV, Feigin LA, Kashkarov PK и пр. Polyaniline-based memristive microdevice with high switching rate and endurance. Applied Physics Letters. 2018 Янв. 22;112(4). 043302. https://doi.org/10.1063/1.5013929

Author

Lapkin, D. A. ; Emelyanov, A. V. ; Demin, V. A. ; Erokhin, V. V. ; Feigin, L. A. ; Kashkarov, P. K. ; Kovalchuk, M. V. / Polyaniline-based memristive microdevice with high switching rate and endurance. в: Applied Physics Letters. 2018 ; Том 112, № 4.

BibTeX

@article{e5435986f575423c9ba544509aaca980,
title = "Polyaniline-based memristive microdevice with high switching rate and endurance",
abstract = "Polyaniline (PANI) based memristive devices have emerged as promising candidates for hardware implementation of artificial synapses (the key components of neuromorphic systems) due to their high flexibility, low cost, solution processability, three-dimensional stacking capability, and biocompatibility. Here, we report on a way of the significant improvement of the switching rate and endurance of PANI-based memristive devices. The reduction of the PANI active channel dimension leads to the increase in the resistive switching rate by hundreds of times in comparison with the conventional one. The miniaturized memristive device was shown to be stable within at least 104 cyclic switching events between high- A nd low-conductive states with a retention time of at least 103 s. The obtained results make PANI-based memristive devices potentially widely applicable in neuromorphic systems.",
author = "Lapkin, {D. A.} and Emelyanov, {A. V.} and Demin, {V. A.} and Erokhin, {V. V.} and Feigin, {L. A.} and Kashkarov, {P. K.} and Kovalchuk, {M. V.}",
note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",
year = "2018",
month = jan,
day = "22",
doi = "10.1063/1.5013929",
language = "English",
volume = "112",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "4",

}

RIS

TY - JOUR

T1 - Polyaniline-based memristive microdevice with high switching rate and endurance

AU - Lapkin, D. A.

AU - Emelyanov, A. V.

AU - Demin, V. A.

AU - Erokhin, V. V.

AU - Feigin, L. A.

AU - Kashkarov, P. K.

AU - Kovalchuk, M. V.

N1 - Publisher Copyright: © 2018 Author(s).

PY - 2018/1/22

Y1 - 2018/1/22

N2 - Polyaniline (PANI) based memristive devices have emerged as promising candidates for hardware implementation of artificial synapses (the key components of neuromorphic systems) due to their high flexibility, low cost, solution processability, three-dimensional stacking capability, and biocompatibility. Here, we report on a way of the significant improvement of the switching rate and endurance of PANI-based memristive devices. The reduction of the PANI active channel dimension leads to the increase in the resistive switching rate by hundreds of times in comparison with the conventional one. The miniaturized memristive device was shown to be stable within at least 104 cyclic switching events between high- A nd low-conductive states with a retention time of at least 103 s. The obtained results make PANI-based memristive devices potentially widely applicable in neuromorphic systems.

AB - Polyaniline (PANI) based memristive devices have emerged as promising candidates for hardware implementation of artificial synapses (the key components of neuromorphic systems) due to their high flexibility, low cost, solution processability, three-dimensional stacking capability, and biocompatibility. Here, we report on a way of the significant improvement of the switching rate and endurance of PANI-based memristive devices. The reduction of the PANI active channel dimension leads to the increase in the resistive switching rate by hundreds of times in comparison with the conventional one. The miniaturized memristive device was shown to be stable within at least 104 cyclic switching events between high- A nd low-conductive states with a retention time of at least 103 s. The obtained results make PANI-based memristive devices potentially widely applicable in neuromorphic systems.

UR - http://www.scopus.com/inward/record.url?scp=85041104442&partnerID=8YFLogxK

U2 - 10.1063/1.5013929

DO - 10.1063/1.5013929

M3 - Article

AN - SCOPUS:85041104442

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 043302

ER -

ID: 88200683