Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Polarized neutron reflectometry from the interface of the heterostructures SiO2(Co)/Si and SiO2(Co)/GaAs. / Dyadkina, Ekaterina A.; Grigoryeva, Natalia A.; Vorobiev, Alexey A.; Grigoriev, Sergey V.; Lutsev, Leonid V.; Zhernenkov, Kirill; Wolff, Maximilian; Lott, Dieter; Stognij, Alexander I.; Novitskii, Nicolay N.; Toperverg, Boris P.
в: Physica B: Condensed Matter, Том 404, № 17, 01.09.2009, стр. 2547-2549.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Polarized neutron reflectometry from the interface of the heterostructures SiO2(Co)/Si and SiO2(Co)/GaAs
AU - Dyadkina, Ekaterina A.
AU - Grigoryeva, Natalia A.
AU - Vorobiev, Alexey A.
AU - Grigoriev, Sergey V.
AU - Lutsev, Leonid V.
AU - Zhernenkov, Kirill
AU - Wolff, Maximilian
AU - Lott, Dieter
AU - Stognij, Alexander I.
AU - Novitskii, Nicolay N.
AU - Toperverg, Boris P.
PY - 2009/9/1
Y1 - 2009/9/1
N2 - Polarized neutron reflectometry is used to investigate SiO2(Co) granular films (70 at% of Co nanoparticles in SiO2 matrix) deposited on Si and GaAs substrates. The aim of the study is to compare magnetization depth profiles in two systems: in SiO2(Co)/GaAs heterostructure which shows at room temperature giant injection magnetoresistance (IMR) with the system SiO2(Co)/Si which reveals almost no IMR effect. We found that at room temperature and at the same value of external magnetic field mean magnetization in the SiO2(Co)/GaAs sample is much higher than in the case of SiO2(Co)/Si. We also demonstrate that magnetic scattering length density, and hence, magnetization profile strongly depends on the substrate. We show that SiO2(Co)/Si heterostructure is ferromagnetically ordered within the temperature range between 120 and 460 K what could explain a weak IMR.
AB - Polarized neutron reflectometry is used to investigate SiO2(Co) granular films (70 at% of Co nanoparticles in SiO2 matrix) deposited on Si and GaAs substrates. The aim of the study is to compare magnetization depth profiles in two systems: in SiO2(Co)/GaAs heterostructure which shows at room temperature giant injection magnetoresistance (IMR) with the system SiO2(Co)/Si which reveals almost no IMR effect. We found that at room temperature and at the same value of external magnetic field mean magnetization in the SiO2(Co)/GaAs sample is much higher than in the case of SiO2(Co)/Si. We also demonstrate that magnetic scattering length density, and hence, magnetization profile strongly depends on the substrate. We show that SiO2(Co)/Si heterostructure is ferromagnetically ordered within the temperature range between 120 and 460 K what could explain a weak IMR.
KW - Injection magnetoresistance
KW - Interface
KW - Nanoparticles
KW - Polarized neutron reflectometry
UR - http://www.scopus.com/inward/record.url?scp=68649125248&partnerID=8YFLogxK
U2 - 10.1016/j.physb.2009.06.019
DO - 10.1016/j.physb.2009.06.019
M3 - Article
AN - SCOPUS:68649125248
VL - 404
SP - 2547
EP - 2549
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 17
ER -
ID: 28231143