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Polarity Switching in Organic Electronic Devices via Terminal Substitution of Active-Layer Molecules. / Dominskii, D. I.; Kharlanov, O.G.; Trukhanov, V.A.; Sosorev, A.Yu.; Sorokina, N.I.; Kazantsev, M.S.; Лазнева, Элеонора Федоровна; Герасимова, Наталия Борисовна; Соболев, Виталий Сергеевич; Комолов, Алексей Сергеевич; Борщев, О.В.; Пономаренко, С. А.

в: ACS Applied Electronic Materials, Том 4, № 12, 07.12.2022, стр. 6345–6356.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Dominskii, DI, Kharlanov, OG, Trukhanov, VA, Sosorev, AY, Sorokina, NI, Kazantsev, MS, Лазнева, ЭФ, Герасимова, НБ, Соболев, ВС, Комолов, АС, Борщев, ОВ & Пономаренко, СА 2022, 'Polarity Switching in Organic Electronic Devices via Terminal Substitution of Active-Layer Molecules', ACS Applied Electronic Materials, Том. 4, № 12, стр. 6345–6356. https://doi.org/10.1021/acsaelm.2c01481

APA

Dominskii, D. I., Kharlanov, O. G., Trukhanov, V. A., Sosorev, A. Y., Sorokina, N. I., Kazantsev, M. S., Лазнева, Э. Ф., Герасимова, Н. Б., Соболев, В. С., Комолов, А. С., Борщев, О. В., & Пономаренко, С. А. (2022). Polarity Switching in Organic Electronic Devices via Terminal Substitution of Active-Layer Molecules. ACS Applied Electronic Materials, 4(12), 6345–6356. https://doi.org/10.1021/acsaelm.2c01481

Vancouver

Dominskii DI, Kharlanov OG, Trukhanov VA, Sosorev AY, Sorokina NI, Kazantsev MS и пр. Polarity Switching in Organic Electronic Devices via Terminal Substitution of Active-Layer Molecules. ACS Applied Electronic Materials. 2022 Дек. 7;4(12):6345–6356. https://doi.org/10.1021/acsaelm.2c01481

Author

Dominskii, D. I. ; Kharlanov, O.G. ; Trukhanov, V.A. ; Sosorev, A.Yu. ; Sorokina, N.I. ; Kazantsev, M.S. ; Лазнева, Элеонора Федоровна ; Герасимова, Наталия Борисовна ; Соболев, Виталий Сергеевич ; Комолов, Алексей Сергеевич ; Борщев, О.В. ; Пономаренко, С. А. / Polarity Switching in Organic Electronic Devices via Terminal Substitution of Active-Layer Molecules. в: ACS Applied Electronic Materials. 2022 ; Том 4, № 12. стр. 6345–6356.

BibTeX

@article{451172d75949409996c34dbc6dceb2c5,
title = "Polarity Switching in Organic Electronic Devices via Terminal Substitution of Active-Layer Molecules",
abstract = "Organic electronic devices often suffer from poor charge injection limiting their performance. Specifically, high-performance electronic devices usually need Ohmic contacts, but it is not easy to realize them in junctions of the organic semiconductor with the electrodes because of the contact problems. In this work, polarity switching in organic field-effect transistors (OFETs) that is independent of the electrode work function is demonstrated-the switching of charge injection from the p-type to ambipolar and to the n-type-via modification of the donor/acceptor character of the molecular terminal substituents. By using three thiophene-phenylene co-oligomers with the same conjugated core, similar crystal packings, but different terminal substituents (methyl, trimethylsilyl, and trifluoromethyl), the polarity switching in both thin-film and single-crystal OFETs is demonstrated. The ultraviolet photoelectron spectroscopy studies and electronic structure calculations justify a definitive role of the interface dipole stemming from the terminal groups in controlling the heights of charge injection barriers and hence in charge injection into the OFET active layer. The results obtained are expected to facilitate rational design of organic semiconductors for high-performance electronic devices.",
keywords = "contacts, electronic structure calculations, interface dipole, organic field-effect transistor, organic semiconductor",
author = "Dominskii, {D. I.} and O.G. Kharlanov and V.A. Trukhanov and A.Yu. Sosorev and N.I. Sorokina and M.S. Kazantsev and Лазнева, {Элеонора Федоровна} and Герасимова, {Наталия Борисовна} and Соболев, {Виталий Сергеевич} and Комолов, {Алексей Сергеевич} and О.В. Борщев and Пономаренко, {С. А.}",
year = "2022",
month = dec,
day = "7",
doi = "10.1021/acsaelm.2c01481",
language = "English",
volume = "4",
pages = "6345–6356",
journal = "ACS Applied Electronic Materials",
issn = "2637-6113",
publisher = "American Chemical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Polarity Switching in Organic Electronic Devices via Terminal Substitution of Active-Layer Molecules

AU - Dominskii, D. I.

AU - Kharlanov, O.G.

AU - Trukhanov, V.A.

AU - Sosorev, A.Yu.

AU - Sorokina, N.I.

AU - Kazantsev, M.S.

AU - Лазнева, Элеонора Федоровна

AU - Герасимова, Наталия Борисовна

AU - Соболев, Виталий Сергеевич

AU - Комолов, Алексей Сергеевич

AU - Борщев, О.В.

AU - Пономаренко, С. А.

PY - 2022/12/7

Y1 - 2022/12/7

N2 - Organic electronic devices often suffer from poor charge injection limiting their performance. Specifically, high-performance electronic devices usually need Ohmic contacts, but it is not easy to realize them in junctions of the organic semiconductor with the electrodes because of the contact problems. In this work, polarity switching in organic field-effect transistors (OFETs) that is independent of the electrode work function is demonstrated-the switching of charge injection from the p-type to ambipolar and to the n-type-via modification of the donor/acceptor character of the molecular terminal substituents. By using three thiophene-phenylene co-oligomers with the same conjugated core, similar crystal packings, but different terminal substituents (methyl, trimethylsilyl, and trifluoromethyl), the polarity switching in both thin-film and single-crystal OFETs is demonstrated. The ultraviolet photoelectron spectroscopy studies and electronic structure calculations justify a definitive role of the interface dipole stemming from the terminal groups in controlling the heights of charge injection barriers and hence in charge injection into the OFET active layer. The results obtained are expected to facilitate rational design of organic semiconductors for high-performance electronic devices.

AB - Organic electronic devices often suffer from poor charge injection limiting their performance. Specifically, high-performance electronic devices usually need Ohmic contacts, but it is not easy to realize them in junctions of the organic semiconductor with the electrodes because of the contact problems. In this work, polarity switching in organic field-effect transistors (OFETs) that is independent of the electrode work function is demonstrated-the switching of charge injection from the p-type to ambipolar and to the n-type-via modification of the donor/acceptor character of the molecular terminal substituents. By using three thiophene-phenylene co-oligomers with the same conjugated core, similar crystal packings, but different terminal substituents (methyl, trimethylsilyl, and trifluoromethyl), the polarity switching in both thin-film and single-crystal OFETs is demonstrated. The ultraviolet photoelectron spectroscopy studies and electronic structure calculations justify a definitive role of the interface dipole stemming from the terminal groups in controlling the heights of charge injection barriers and hence in charge injection into the OFET active layer. The results obtained are expected to facilitate rational design of organic semiconductors for high-performance electronic devices.

KW - contacts

KW - electronic structure calculations

KW - interface dipole

KW - organic field-effect transistor

KW - organic semiconductor

UR - https://www.mendeley.com/catalogue/bec7c867-2e62-3da1-90d2-4e75e98d85d4/

U2 - 10.1021/acsaelm.2c01481

DO - 10.1021/acsaelm.2c01481

M3 - Article

VL - 4

SP - 6345

EP - 6356

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

SN - 2637-6113

IS - 12

ER -

ID: 101344095