TY - JOUR

T1 - Planar tunneling Hall effect in two-layer system

AU - Журавлев, Михаил Евгеньевич

AU - Alexandrov, Artem

AU - Vedyayev, Anatoly

PY - 2024/4/1

Y1 - 2024/4/1

N2 - We investigate planar Hall effect and related phenomena in the two-layer system consisting of ferroelectric barrier with spin–orbit coupling and thin ferromagnetic layers. We demonstrate that planar Hall effect in this system is a size effect which originates from finite thickness of ferromagnetic layer and spin–orbit coupling linear in wave number in the barrier. Our calculations reveal that Hall current, spin Hall current and spin accumulation in the barrier layer as well as in the ferromagnetic layer can be manipulated by the reversal of electrical polarization of the barrier and by changing the direction of magnetization of ferromagnetic layer.

AB - We investigate planar Hall effect and related phenomena in the two-layer system consisting of ferroelectric barrier with spin–orbit coupling and thin ferromagnetic layers. We demonstrate that planar Hall effect in this system is a size effect which originates from finite thickness of ferromagnetic layer and spin–orbit coupling linear in wave number in the barrier. Our calculations reveal that Hall current, spin Hall current and spin accumulation in the barrier layer as well as in the ferromagnetic layer can be manipulated by the reversal of electrical polarization of the barrier and by changing the direction of magnetization of ferromagnetic layer.

KW - Ferroelectric barrier

KW - Spin accumulation

KW - planar Hall effect

KW - spin Hall current

UR - https://www.mendeley.com/catalogue/a55023cc-8c5b-31b2-ba56-703447c1e037/

U2 - 10.1016/j.jmmm.2023.171551

DO - 10.1016/j.jmmm.2023.171551

M3 - Article

VL - 595

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

M1 - 171551

ER -