Piezoelectric Properties of Porous Silicon › Научные исследования в СПбГУ

Standard

Piezoelectric Properties of Porous Silicon. / Morozov, V. A.; Zegrya, A. G.; Zegrya, G. G.; Savenkov, G. G.

в: JETP Letters, Том 114, № 10, 11.2021, стр. 625-629.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Morozov, VA, Zegrya, AG, Zegrya, GG & Savenkov, GG 2021, 'Piezoelectric Properties of Porous Silicon', JETP Letters, Том. 114, № 10, стр. 625-629. https://doi.org/10.1134/S0021364021220100

APA

Morozov, V. A., Zegrya, A. G., Zegrya, G. G., & Savenkov, G. G. (2021). Piezoelectric Properties of Porous Silicon. JETP Letters, 114(10), 625-629. https://doi.org/10.1134/S0021364021220100

Vancouver

Morozov VA, Zegrya AG, Zegrya GG, Savenkov GG. Piezoelectric Properties of Porous Silicon. JETP Letters. 2021 Нояб.;114(10):625-629. https://doi.org/10.1134/S0021364021220100

Author

Morozov, V. A. ; Zegrya, A. G. ; Zegrya, G. G. ; Savenkov, G. G. / Piezoelectric Properties of Porous Silicon. в: JETP Letters. 2021 ; Том 114, № 10. стр. 625-629.

BibTeX

@article{685f753fcb9e4477b31cac589041d9c1,

title = "Piezoelectric Properties of Porous Silicon",

abstract = "The theoretical analysis and direct experiments with samples based on n- and p-type porous silicon demonstrate that porous silicon becomes a piezoelectric because of the reduction of the symmetry of the crystal lattice. It is shown that both n and p types of porous silicon have piezoelectric properties. The piezoelectric properties of n-type porous silicon are 2.5 times weaker than the piezoelectric properties of p-type porous silicon at the same porosity because pores in p-type silicon become wider and smoother with an increase in the distance from the surface, whereas pores in n-type porous silicon become narrower and more sinuous.",

author = "Morozov, {V. A.} and Zegrya, {A. G.} and Zegrya, {G. G.} and Savenkov, {G. G.}",

note = "Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Inc.",

year = "2021",

month = nov,

doi = "10.1134/S0021364021220100",

language = "English",

volume = "114",

pages = "625--629",

journal = "JETP Letters",

issn = "0021-3640",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "10",

}

RIS

TY - JOUR

T1 - Piezoelectric Properties of Porous Silicon

AU - Morozov, V. A.

AU - Zegrya, A. G.

AU - Zegrya, G. G.

AU - Savenkov, G. G.

PY - 2021/11

Y1 - 2021/11

N2 - The theoretical analysis and direct experiments with samples based on n- and p-type porous silicon demonstrate that porous silicon becomes a piezoelectric because of the reduction of the symmetry of the crystal lattice. It is shown that both n and p types of porous silicon have piezoelectric properties. The piezoelectric properties of n-type porous silicon are 2.5 times weaker than the piezoelectric properties of p-type porous silicon at the same porosity because pores in p-type silicon become wider and smoother with an increase in the distance from the surface, whereas pores in n-type porous silicon become narrower and more sinuous.

AB - The theoretical analysis and direct experiments with samples based on n- and p-type porous silicon demonstrate that porous silicon becomes a piezoelectric because of the reduction of the symmetry of the crystal lattice. It is shown that both n and p types of porous silicon have piezoelectric properties. The piezoelectric properties of n-type porous silicon are 2.5 times weaker than the piezoelectric properties of p-type porous silicon at the same porosity because pores in p-type silicon become wider and smoother with an increase in the distance from the surface, whereas pores in n-type porous silicon become narrower and more sinuous.

UR - http://www.scopus.com/inward/record.url?scp=85124326857&partnerID=8YFLogxK

U2 - 10.1134/S0021364021220100

DO - 10.1134/S0021364021220100

M3 - Article

AN - SCOPUS:85124326857

VL - 114

SP - 625

EP - 629

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 10

ER -

ID: 93056431