TY - JOUR

T1 - Photophysical Properties of Thin Films of Perylene Modified with Tetracarboxylic Acid Dianhydride and Diimide Functional Groups

AU - Komolov, A. S.

AU - Lazneva, E. F.

AU - Zhizhin, E. V.

AU - Alidzhanov, E. K.

AU - Lantukh, Yu D.

AU - Letuta, S. N.

AU - Razdobreev, D. A.

N1 - Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021

Y1 - 2021

N2 - Abstract: Films of the organic semiconductors perylenetetracarboxylic acid dianhydride (PTCDA) and dibenzyl-perylenetetracarboxylic acid diimide (N,N'-DBPTCDI) are prepared by thermal sputtering in vacuum, and their surface morphology is studied by atomic force microscopy. Annealing the films at 420 K induces restructuring and crystallization. The optical band gap of the films is estimated from their absorption spectra. The temperature dependence of dark conductivity of PTCDA and N,N'-DBPTCDI films is measured before and after annealing (T = 420 K). The activation energy of charge carrier traps is determined. The density of states localized in the band gap is reconstructed from photoconductivity spectra of considered films recorded using the constant photocurrent method. Model photovoltaic cells are fabricated on the basis of PTCDA/CuPc and N,N'-DBPTCDI/CuPc structures (CuPc, copper phthalocyanine). Transient photovoltage decay curves are measured for these photovoltaic cells in the barrier photovoltage mode under pulsed illumination. The carrier mobility in the semiconducting materials under study is estimated based on these measurements.

AB - Abstract: Films of the organic semiconductors perylenetetracarboxylic acid dianhydride (PTCDA) and dibenzyl-perylenetetracarboxylic acid diimide (N,N'-DBPTCDI) are prepared by thermal sputtering in vacuum, and their surface morphology is studied by atomic force microscopy. Annealing the films at 420 K induces restructuring and crystallization. The optical band gap of the films is estimated from their absorption spectra. The temperature dependence of dark conductivity of PTCDA and N,N'-DBPTCDI films is measured before and after annealing (T = 420 K). The activation energy of charge carrier traps is determined. The density of states localized in the band gap is reconstructed from photoconductivity spectra of considered films recorded using the constant photocurrent method. Model photovoltaic cells are fabricated on the basis of PTCDA/CuPc and N,N'-DBPTCDI/CuPc structures (CuPc, copper phthalocyanine). Transient photovoltage decay curves are measured for these photovoltaic cells in the barrier photovoltage mode under pulsed illumination. The carrier mobility in the semiconducting materials under study is estimated based on these measurements.

KW - charge carrier mobility

KW - conjugated organic molecules

KW - perylene derivatives

KW - photoelectric properties

KW - temperature-dependent electrical conductivity

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=85121500140&partnerID=8YFLogxK

U2 - 10.1134/S1063783421090183

DO - 10.1134/S1063783421090183

M3 - Article

AN - SCOPUS:85121500140

VL - 63

SP - 1617

EP - 1623

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 8

ER -