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Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate. / Melnichenko, I.A.; Dragunova, A.; Kryzhanovskaya, N.V.; Viazmintov, D.V.; Semenova, E.; Berdnikov, Y.S.

в: Journal of Physics: Conference Series, Том 2227, № 1, 012017, 28.03.2022.

Результаты исследований: Научные публикации в периодических изданияхстатья в журнале по материалам конференцииРецензирование

Harvard

Melnichenko, IA, Dragunova, A, Kryzhanovskaya, NV, Viazmintov, DV, Semenova, E & Berdnikov, YS 2022, 'Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate', Journal of Physics: Conference Series, Том. 2227, № 1, 012017. https://doi.org/10.1088/1742-6596/2227/1/012017

APA

Melnichenko, I. A., Dragunova, A., Kryzhanovskaya, N. V., Viazmintov, D. V., Semenova, E., & Berdnikov, Y. S. (2022). Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate. Journal of Physics: Conference Series, 2227(1), [012017]. https://doi.org/10.1088/1742-6596/2227/1/012017

Vancouver

Melnichenko IA, Dragunova A, Kryzhanovskaya NV, Viazmintov DV, Semenova E, Berdnikov YS. Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate. Journal of Physics: Conference Series. 2022 Март 28;2227(1). 012017. https://doi.org/10.1088/1742-6596/2227/1/012017

Author

Melnichenko, I.A. ; Dragunova, A. ; Kryzhanovskaya, N.V. ; Viazmintov, D.V. ; Semenova, E. ; Berdnikov, Y.S. / Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate. в: Journal of Physics: Conference Series. 2022 ; Том 2227, № 1.

BibTeX

@article{5b922e56d7a94669917bd0624dcf2a2b,
title = "Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate",
abstract = "We present a photoluminescence study of In(As,P) monolithic nanoinclusions into Si (100) substrates. The structures were grown in openings of the silicon substrates using an original approach based on the metal-organic vapor epitaxy method. The obtained arrays of In(As,P) nanoinclusions into the Si (100) surface were investigated by scanning microphotoluminescence spectroscopy. The obtained results show high crystalline quality of In(As,P) inclusions with broad emission peak in the near-infrared range of wavelengths.",
author = "I.A. Melnichenko and A. Dragunova and N.V. Kryzhanovskaya and D.V. Viazmintov and E. Semenova and Y.S. Berdnikov",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 23rd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2021 ; Conference date: 22-11-2021 Through 26-11-2021",
year = "2022",
month = mar,
day = "28",
doi = "10.1088/1742-6596/2227/1/012017",
language = "English",
volume = "2227",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate

AU - Melnichenko, I.A.

AU - Dragunova, A.

AU - Kryzhanovskaya, N.V.

AU - Viazmintov, D.V.

AU - Semenova, E.

AU - Berdnikov, Y.S.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2022/3/28

Y1 - 2022/3/28

N2 - We present a photoluminescence study of In(As,P) monolithic nanoinclusions into Si (100) substrates. The structures were grown in openings of the silicon substrates using an original approach based on the metal-organic vapor epitaxy method. The obtained arrays of In(As,P) nanoinclusions into the Si (100) surface were investigated by scanning microphotoluminescence spectroscopy. The obtained results show high crystalline quality of In(As,P) inclusions with broad emission peak in the near-infrared range of wavelengths.

AB - We present a photoluminescence study of In(As,P) monolithic nanoinclusions into Si (100) substrates. The structures were grown in openings of the silicon substrates using an original approach based on the metal-organic vapor epitaxy method. The obtained arrays of In(As,P) nanoinclusions into the Si (100) surface were investigated by scanning microphotoluminescence spectroscopy. The obtained results show high crystalline quality of In(As,P) inclusions with broad emission peak in the near-infrared range of wavelengths.

UR - http://www.scopus.com/inward/record.url?scp=85127943668&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/ca1dfd0e-d2b4-376c-9c4b-19472c45ddfa/

U2 - 10.1088/1742-6596/2227/1/012017

DO - 10.1088/1742-6596/2227/1/012017

M3 - Conference article

VL - 2227

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012017

T2 - 23rd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2021

Y2 - 22 November 2021 through 26 November 2021

ER -

ID: 100359334