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Photoluminescence Spectra of thin Zno films grown by ALD technology. / Akopyan, I.K.; Davydov, V.Y.; Labzovskaya, M.E.; Lisachenko, A.A.; Mogunov, Y.A.; Nazarov, D.V.; Novikov, B.V.; Romanychev, A.I.; Serov, A.Y.; Smirnov, A.N.; Titov, V.V.; Filosofov, N.G.
в:
Physics of the Solid State, Том 57, № 9, 2015, стр. 1865-1869.
Результаты исследований: Научные публикации в периодических изданиях › статья
Harvard
Akopyan, IK, Davydov, VY
, Labzovskaya, ME, Lisachenko, AA, Mogunov, YA, Nazarov, DV
, Novikov, BV, Romanychev, AI
, Serov, AY, Smirnov, AN, Titov, VV
& Filosofov, NG 2015, '
Photoluminescence Spectra of thin Zno films grown by ALD technology',
Physics of the Solid State, Том. 57, № 9, стр. 1865-1869.
https://doi.org/10.1134/S1063783415090036
APA
Akopyan, I. K., Davydov, V. Y.
, Labzovskaya, M. E., Lisachenko, A. A., Mogunov, Y. A., Nazarov, D. V.
, Novikov, B. V., Romanychev, A. I.
, Serov, A. Y., Smirnov, A. N., Titov, V. V.
, & Filosofov, N. G. (2015).
Photoluminescence Spectra of thin Zno films grown by ALD technology.
Physics of the Solid State,
57(9), 1865-1869.
https://doi.org/10.1134/S1063783415090036
Vancouver
Author
Akopyan, I.K. ; Davydov, V.Y.
; Labzovskaya, M.E. ; Lisachenko, A.A. ; Mogunov, Y.A. ; Nazarov, D.V.
; Novikov, B.V. ; Romanychev, A.I.
; Serov, A.Y. ; Smirnov, A.N. ; Titov, V.V.
; Filosofov, N.G. /
Photoluminescence Spectra of thin Zno films grown by ALD technology. в:
Physics of the Solid State. 2015 ; Том 57, № 9. стр. 1865-1869.
BibTeX
@article{2cf6aa5b172d42c88c32316ac4db7691,
title = "Photoluminescence Spectra of thin Zno films grown by ALD technology",
abstract = "The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic orientations of substrates have been studied in a wide temperature range at different excitation levels. A model describing the origin of the new band has been proposed.",
author = "I.K. Akopyan and V.Y. Davydov and M.E. Labzovskaya and A.A. Lisachenko and Y.A. Mogunov and D.V. Nazarov and B.V. Novikov and A.I. Romanychev and A.Y. Serov and A.N. Smirnov and V.V. Titov and N.G. Filosofov",
year = "2015",
doi = "10.1134/S1063783415090036",
language = "English",
volume = "57",
pages = "1865--1869",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "9",
}
RIS
TY - JOUR
T1 - Photoluminescence Spectra of thin Zno films grown by ALD technology
AU - Akopyan, I.K.
AU - Davydov, V.Y.
AU - Labzovskaya, M.E.
AU - Lisachenko, A.A.
AU - Mogunov, Y.A.
AU - Nazarov, D.V.
AU - Novikov, B.V.
AU - Romanychev, A.I.
AU - Serov, A.Y.
AU - Smirnov, A.N.
AU - Titov, V.V.
AU - Filosofov, N.G.
PY - 2015
Y1 - 2015
N2 - The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic orientations of substrates have been studied in a wide temperature range at different excitation levels. A model describing the origin of the new band has been proposed.
AB - The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic orientations of substrates have been studied in a wide temperature range at different excitation levels. A model describing the origin of the new band has been proposed.
U2 - 10.1134/S1063783415090036
DO - 10.1134/S1063783415090036
M3 - Article
VL - 57
SP - 1865
EP - 1869
JO - Physics of the Solid State
JF - Physics of the Solid State
SN - 1063-7834
IS - 9
ER -
