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Photoluminescence of CdTe/ZnTe Heterostructures with Nominal CdTe Layer Thickness from One to Eight Monolayers Grown by Atomic Layer Deposition. / Agekyan, V. F. ; Serov, A. Yu. ; Filosofov, N. G. ; Karczewski, G.

в: Physics of the Solid State, Том 62, № 6, 2020, стр. 1056-1059.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Agekyan, VF, Serov, AY, Filosofov, NG & Karczewski, G 2020, 'Photoluminescence of CdTe/ZnTe Heterostructures with Nominal CdTe Layer Thickness from One to Eight Monolayers Grown by Atomic Layer Deposition', Physics of the Solid State, Том. 62, № 6, стр. 1056-1059. https://doi.org/10.1134/S1063783420060025

APA

Agekyan, V. F., Serov, A. Y., Filosofov, N. G., & Karczewski, G. (2020). Photoluminescence of CdTe/ZnTe Heterostructures with Nominal CdTe Layer Thickness from One to Eight Monolayers Grown by Atomic Layer Deposition. Physics of the Solid State, 62(6), 1056-1059. https://doi.org/10.1134/S1063783420060025

Vancouver

Agekyan VF, Serov AY, Filosofov NG, Karczewski G. Photoluminescence of CdTe/ZnTe Heterostructures with Nominal CdTe Layer Thickness from One to Eight Monolayers Grown by Atomic Layer Deposition. Physics of the Solid State. 2020;62(6):1056-1059. https://doi.org/10.1134/S1063783420060025

Author

Agekyan, V. F. ; Serov, A. Yu. ; Filosofov, N. G. ; Karczewski, G. / Photoluminescence of CdTe/ZnTe Heterostructures with Nominal CdTe Layer Thickness from One to Eight Monolayers Grown by Atomic Layer Deposition. в: Physics of the Solid State. 2020 ; Том 62, № 6. стр. 1056-1059.

BibTeX

@article{b8eb5993d08145f091181db8fff15fc6,
title = "Photoluminescence of CdTe/ZnTe Heterostructures with Nominal CdTe Layer Thickness from One to Eight Monolayers Grown by Atomic Layer Deposition",
abstract = "We studied the luminescence of CdTe layers with a nominal thickness of one, two, four, and eight monolayers (MLs) grown by atomic layer deposition in a ZnTe matrix. The layers with a thickness of one and two monolayers exhibit the properties of homogeneous layers, while the layers with a thickness of four and eight monolayers are planar arrays of quantum dots (QDs). The sizes of QDs and their size dispersion increase with an increase in the nominal thickness of the CdTe layer. The shape of the luminescence excitation spectra of the CdTe layer in these samples varies greatly. Depending on the energy distance between the exciton levels of the CdTe layers and the ZnTe matrix, the ratio of the contributions of the ZnTe exciton and charge carriers unbound to the exciton to the energy transfer varies significantly.",
keywords = "heterostructures II–VI, excitons, luminescence, energy transfer, heterostructures II–VI, excitons, luminescence, energy transfer, LUMINESCENCE, QUANTUM, heterostructures II-VI",
author = "Agekyan, {V. F.} and Serov, {A. Yu.} and Filosofov, {N. G.} and G. Karczewski",
note = "Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd.",
year = "2020",
doi = "10.1134/S1063783420060025",
language = "English",
volume = "62",
pages = "1056--1059",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "6",

}

RIS

TY - JOUR

T1 - Photoluminescence of CdTe/ZnTe Heterostructures with Nominal CdTe Layer Thickness from One to Eight Monolayers Grown by Atomic Layer Deposition

AU - Agekyan, V. F.

AU - Serov, A. Yu.

AU - Filosofov, N. G.

AU - Karczewski, G.

N1 - Publisher Copyright: © 2020, Pleiades Publishing, Ltd.

PY - 2020

Y1 - 2020

N2 - We studied the luminescence of CdTe layers with a nominal thickness of one, two, four, and eight monolayers (MLs) grown by atomic layer deposition in a ZnTe matrix. The layers with a thickness of one and two monolayers exhibit the properties of homogeneous layers, while the layers with a thickness of four and eight monolayers are planar arrays of quantum dots (QDs). The sizes of QDs and their size dispersion increase with an increase in the nominal thickness of the CdTe layer. The shape of the luminescence excitation spectra of the CdTe layer in these samples varies greatly. Depending on the energy distance between the exciton levels of the CdTe layers and the ZnTe matrix, the ratio of the contributions of the ZnTe exciton and charge carriers unbound to the exciton to the energy transfer varies significantly.

AB - We studied the luminescence of CdTe layers with a nominal thickness of one, two, four, and eight monolayers (MLs) grown by atomic layer deposition in a ZnTe matrix. The layers with a thickness of one and two monolayers exhibit the properties of homogeneous layers, while the layers with a thickness of four and eight monolayers are planar arrays of quantum dots (QDs). The sizes of QDs and their size dispersion increase with an increase in the nominal thickness of the CdTe layer. The shape of the luminescence excitation spectra of the CdTe layer in these samples varies greatly. Depending on the energy distance between the exciton levels of the CdTe layers and the ZnTe matrix, the ratio of the contributions of the ZnTe exciton and charge carriers unbound to the exciton to the energy transfer varies significantly.

KW - heterostructures II–VI

KW - excitons

KW - luminescence

KW - energy transfer

KW - heterostructures II–VI

KW - excitons

KW - luminescence

KW - energy transfer

KW - LUMINESCENCE

KW - QUANTUM

KW - heterostructures II-VI

UR - http://www.scopus.com/inward/record.url?scp=85086228492&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/d33a36f8-bfe6-3ed3-8c7d-67237392b341/

U2 - 10.1134/S1063783420060025

DO - 10.1134/S1063783420060025

M3 - Article

VL - 62

SP - 1056

EP - 1059

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 6

ER -

ID: 53946648