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Photoluminescence in oxidized nanoporous silicon doped with erbium ions. / Grigor'ev, L. V.; MikhaѤlov, A. V.

в: Journal of Optical Technology (A Translation of Opticheskii Zhurnal), Том 82, № 2, 01.02.2015, стр. 127-130.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Grigor'ev, LV & MikhaѤlov, AV 2015, 'Photoluminescence in oxidized nanoporous silicon doped with erbium ions', Journal of Optical Technology (A Translation of Opticheskii Zhurnal), Том. 82, № 2, стр. 127-130. https://doi.org/10.1364/JOT.82.000127

APA

Grigor'ev, L. V., & MikhaѤlov, A. V. (2015). Photoluminescence in oxidized nanoporous silicon doped with erbium ions. Journal of Optical Technology (A Translation of Opticheskii Zhurnal), 82(2), 127-130. https://doi.org/10.1364/JOT.82.000127

Vancouver

Grigor'ev LV, MikhaѤlov AV. Photoluminescence in oxidized nanoporous silicon doped with erbium ions. Journal of Optical Technology (A Translation of Opticheskii Zhurnal). 2015 Февр. 1;82(2):127-130. https://doi.org/10.1364/JOT.82.000127

Author

Grigor'ev, L. V. ; MikhaѤlov, A. V. / Photoluminescence in oxidized nanoporous silicon doped with erbium ions. в: Journal of Optical Technology (A Translation of Opticheskii Zhurnal). 2015 ; Том 82, № 2. стр. 127-130.

BibTeX

@article{02007ee915f84bd89709f90259301114,
title = "Photoluminescence in oxidized nanoporous silicon doped with erbium ions",
abstract = "This paper presents the results of a study of the structural, optical, and photoluminescence properties of a thin layer of oxidized nanoporous silicon doped with erbium ions. Structural studies have shown that silicon nanoclusters of spherical shape with dimensions from 5 to 35 nm are present in the layer. The transmittance of a layer of oxidized nanoporous silicon doped with erbium ions in the wavelength region from 1.2 to 2.0 μm was at least 54%, and this makes it possible to use it to create active planar waveguides that can be used in integrated optical structures of silicon photonics. Investigation of the photoluminescence spectra at temperatures of 100 and 300 K showed the presence of peaks that characterize the luminescence of erbium ions.",
author = "Grigor'ev, {L. V.} and MikhaѤlov, {A. V.}",
note = "Publisher Copyright: {\textcopyright} 2015 Optical Society of America.",
year = "2015",
month = feb,
day = "1",
doi = "10.1364/JOT.82.000127",
language = "English",
volume = "82",
pages = "127--130",
journal = "Journal of Optical Technology (A Translation of Opticheskii Zhurnal)",
issn = "1070-9762",
publisher = "The Optical Society",
number = "2",

}

RIS

TY - JOUR

T1 - Photoluminescence in oxidized nanoporous silicon doped with erbium ions

AU - Grigor'ev, L. V.

AU - MikhaѤlov, A. V.

N1 - Publisher Copyright: © 2015 Optical Society of America.

PY - 2015/2/1

Y1 - 2015/2/1

N2 - This paper presents the results of a study of the structural, optical, and photoluminescence properties of a thin layer of oxidized nanoporous silicon doped with erbium ions. Structural studies have shown that silicon nanoclusters of spherical shape with dimensions from 5 to 35 nm are present in the layer. The transmittance of a layer of oxidized nanoporous silicon doped with erbium ions in the wavelength region from 1.2 to 2.0 μm was at least 54%, and this makes it possible to use it to create active planar waveguides that can be used in integrated optical structures of silicon photonics. Investigation of the photoluminescence spectra at temperatures of 100 and 300 K showed the presence of peaks that characterize the luminescence of erbium ions.

AB - This paper presents the results of a study of the structural, optical, and photoluminescence properties of a thin layer of oxidized nanoporous silicon doped with erbium ions. Structural studies have shown that silicon nanoclusters of spherical shape with dimensions from 5 to 35 nm are present in the layer. The transmittance of a layer of oxidized nanoporous silicon doped with erbium ions in the wavelength region from 1.2 to 2.0 μm was at least 54%, and this makes it possible to use it to create active planar waveguides that can be used in integrated optical structures of silicon photonics. Investigation of the photoluminescence spectra at temperatures of 100 and 300 K showed the presence of peaks that characterize the luminescence of erbium ions.

UR - http://www.scopus.com/inward/record.url?scp=84961990629&partnerID=8YFLogxK

U2 - 10.1364/JOT.82.000127

DO - 10.1364/JOT.82.000127

M3 - Article

AN - SCOPUS:84961990629

VL - 82

SP - 127

EP - 130

JO - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

JF - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

SN - 1070-9762

IS - 2

ER -

ID: 86117202