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Phonon spectrum of wurtzite GaN and AlN Experiment and theory. / Davydov, V. Yu; Kitaev, Yu E.; Goncharuk, I. N.; Tsaregorodtsev, A. M.; Smirnov, A. N.; Lebedev, A. O.; Botnaryk, V. M.; Zhilyaev, Yu V.; Smirnov, M. B.; Mirgorodsky, A. P.; Semchinova, O. K.

в: Journal of Crystal Growth, Том 189-190, 15.06.1998, стр. 656-660.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Davydov, VY, Kitaev, YE, Goncharuk, IN, Tsaregorodtsev, AM, Smirnov, AN, Lebedev, AO, Botnaryk, VM, Zhilyaev, YV, Smirnov, MB, Mirgorodsky, AP & Semchinova, OK 1998, 'Phonon spectrum of wurtzite GaN and AlN Experiment and theory', Journal of Crystal Growth, Том. 189-190, стр. 656-660. https://doi.org/10.1016/S0022-0248(98)00239-5

APA

Davydov, V. Y., Kitaev, Y. E., Goncharuk, I. N., Tsaregorodtsev, A. M., Smirnov, A. N., Lebedev, A. O., Botnaryk, V. M., Zhilyaev, Y. V., Smirnov, M. B., Mirgorodsky, A. P., & Semchinova, O. K. (1998). Phonon spectrum of wurtzite GaN and AlN Experiment and theory. Journal of Crystal Growth, 189-190, 656-660. https://doi.org/10.1016/S0022-0248(98)00239-5

Vancouver

Davydov VY, Kitaev YE, Goncharuk IN, Tsaregorodtsev AM, Smirnov AN, Lebedev AO и пр. Phonon spectrum of wurtzite GaN and AlN Experiment and theory. Journal of Crystal Growth. 1998 Июнь 15;189-190:656-660. https://doi.org/10.1016/S0022-0248(98)00239-5

Author

Davydov, V. Yu ; Kitaev, Yu E. ; Goncharuk, I. N. ; Tsaregorodtsev, A. M. ; Smirnov, A. N. ; Lebedev, A. O. ; Botnaryk, V. M. ; Zhilyaev, Yu V. ; Smirnov, M. B. ; Mirgorodsky, A. P. ; Semchinova, O. K. / Phonon spectrum of wurtzite GaN and AlN Experiment and theory. в: Journal of Crystal Growth. 1998 ; Том 189-190. стр. 656-660.

BibTeX

@article{3d06917cb39143e7a7426f3de396d93c,
title = "Phonon spectrum of wurtzite GaN and AlN Experiment and theory",
abstract = "We present the results of a detailed study of the first and second-order Raman scattering in wurtzite GaN and AlN at room and liquid helium temperatures. A complete group-theory analysis of phonon symmetry and optical selection rules permitted us to assign the observed features in the second-order Raman spectra to combinations of phonons at the Γ, K, and M points of the Brillouin zone. The joint treatment of these results with lattice dynamical calculations based on phenomenological interatomic potential model allowed us to obtain the reliable data on phonon dispersion curves in bulk GaN and AlN.",
keywords = "Crystal structure and symmetry, Inelastic light scattering, Phonons, Semiconductors",
author = "Davydov, {V. Yu} and Kitaev, {Yu E.} and Goncharuk, {I. N.} and Tsaregorodtsev, {A. M.} and Smirnov, {A. N.} and Lebedev, {A. O.} and Botnaryk, {V. M.} and Zhilyaev, {Yu V.} and Smirnov, {M. B.} and Mirgorodsky, {A. P.} and Semchinova, {O. K.}",
year = "1998",
month = jun,
day = "15",
doi = "10.1016/S0022-0248(98)00239-5",
language = "English",
volume = "189-190",
pages = "656--660",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Phonon spectrum of wurtzite GaN and AlN Experiment and theory

AU - Davydov, V. Yu

AU - Kitaev, Yu E.

AU - Goncharuk, I. N.

AU - Tsaregorodtsev, A. M.

AU - Smirnov, A. N.

AU - Lebedev, A. O.

AU - Botnaryk, V. M.

AU - Zhilyaev, Yu V.

AU - Smirnov, M. B.

AU - Mirgorodsky, A. P.

AU - Semchinova, O. K.

PY - 1998/6/15

Y1 - 1998/6/15

N2 - We present the results of a detailed study of the first and second-order Raman scattering in wurtzite GaN and AlN at room and liquid helium temperatures. A complete group-theory analysis of phonon symmetry and optical selection rules permitted us to assign the observed features in the second-order Raman spectra to combinations of phonons at the Γ, K, and M points of the Brillouin zone. The joint treatment of these results with lattice dynamical calculations based on phenomenological interatomic potential model allowed us to obtain the reliable data on phonon dispersion curves in bulk GaN and AlN.

AB - We present the results of a detailed study of the first and second-order Raman scattering in wurtzite GaN and AlN at room and liquid helium temperatures. A complete group-theory analysis of phonon symmetry and optical selection rules permitted us to assign the observed features in the second-order Raman spectra to combinations of phonons at the Γ, K, and M points of the Brillouin zone. The joint treatment of these results with lattice dynamical calculations based on phenomenological interatomic potential model allowed us to obtain the reliable data on phonon dispersion curves in bulk GaN and AlN.

KW - Crystal structure and symmetry

KW - Inelastic light scattering

KW - Phonons

KW - Semiconductors

UR - http://www.scopus.com/inward/record.url?scp=0032094134&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(98)00239-5

DO - 10.1016/S0022-0248(98)00239-5

M3 - Article

AN - SCOPUS:0032094134

VL - 189-190

SP - 656

EP - 660

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -

ID: 38808678