Samples of pure and chromium- or iron-doped nanosized vanadium dioxide of different morphologies were fabricated by the method of atomic layer deposition (ALD) on the surface of substrates of different structures: amorphous silica and single-crystal silicon. The samples were characterized using photometry and magnetochemical analysis. The occurrence of the semiconductor-metal phase transition (SMPT) was demonstrated on the basis of temperature dependencies, and it was shown that the transition characteristics depended on the substrate type and the nature and amount of the doping element. The SMPT temperature decreases from 340 K (the value characterizing the bulk material) to 100-180 K, depending on the sample composition and structure.