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Peculiarities of electron emission from high-density deep levels of nanodefects in oxygen-implanted silicon. / Danilov, D. V.; Vyvenko, O. F.; Loshachenko, A. S.; Sobolev, N. A.

в: Journal of Physics: Conference Series, Том 1482, № 1, 012003, 25.03.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Danilov, DV, Vyvenko, OF, Loshachenko, AS & Sobolev, NA 2020, 'Peculiarities of electron emission from high-density deep levels of nanodefects in oxygen-implanted silicon', Journal of Physics: Conference Series, Том. 1482, № 1, 012003. https://doi.org/10.1088/1742-6596/1482/1/012003

APA

Danilov, D. V., Vyvenko, O. F., Loshachenko, A. S., & Sobolev, N. A. (2020). Peculiarities of electron emission from high-density deep levels of nanodefects in oxygen-implanted silicon. Journal of Physics: Conference Series, 1482(1), [012003]. https://doi.org/10.1088/1742-6596/1482/1/012003

Vancouver

Danilov DV, Vyvenko OF, Loshachenko AS, Sobolev NA. Peculiarities of electron emission from high-density deep levels of nanodefects in oxygen-implanted silicon. Journal of Physics: Conference Series. 2020 Март 25;1482(1). 012003. https://doi.org/10.1088/1742-6596/1482/1/012003

Author

Danilov, D. V. ; Vyvenko, O. F. ; Loshachenko, A. S. ; Sobolev, N. A. / Peculiarities of electron emission from high-density deep levels of nanodefects in oxygen-implanted silicon. в: Journal of Physics: Conference Series. 2020 ; Том 1482, № 1.

BibTeX

@article{9e9def9f1d7c4fa087c5e9caf8c791b1,
title = "Peculiarities of electron emission from high-density deep levels of nanodefects in oxygen-implanted silicon",
abstract = "The peculiarities of electron emission from electronic states of nanodefects formed at the early stages of oxygen precipitation in oxygen-implanted silicon annealed at 700°C were investigated with a combination of capacitance and current transient spectroscopy of the space charge region (SCR) in semiconductors. It was established that the particular properties of acceptor-like states are due to their high density and their localization at the back side of the implanted region. A model is suggested that explains an apparent emission rate slowdown and the appearance of an unexpected sign of capacitance relaxation signal as a result of the non-monotonic shape of the potential of the Schottky-diode.",
author = "Danilov, {D. V.} and Vyvenko, {O. F.} and Loshachenko, {A. S.} and Sobolev, {N. A.}",
year = "2020",
month = mar,
day = "25",
doi = "10.1088/1742-6596/1482/1/012003",
language = "English",
volume = "1482",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 ; Conference date: 25-11-2019 Through 29-11-2019",

}

RIS

TY - JOUR

T1 - Peculiarities of electron emission from high-density deep levels of nanodefects in oxygen-implanted silicon

AU - Danilov, D. V.

AU - Vyvenko, O. F.

AU - Loshachenko, A. S.

AU - Sobolev, N. A.

PY - 2020/3/25

Y1 - 2020/3/25

N2 - The peculiarities of electron emission from electronic states of nanodefects formed at the early stages of oxygen precipitation in oxygen-implanted silicon annealed at 700°C were investigated with a combination of capacitance and current transient spectroscopy of the space charge region (SCR) in semiconductors. It was established that the particular properties of acceptor-like states are due to their high density and their localization at the back side of the implanted region. A model is suggested that explains an apparent emission rate slowdown and the appearance of an unexpected sign of capacitance relaxation signal as a result of the non-monotonic shape of the potential of the Schottky-diode.

AB - The peculiarities of electron emission from electronic states of nanodefects formed at the early stages of oxygen precipitation in oxygen-implanted silicon annealed at 700°C were investigated with a combination of capacitance and current transient spectroscopy of the space charge region (SCR) in semiconductors. It was established that the particular properties of acceptor-like states are due to their high density and their localization at the back side of the implanted region. A model is suggested that explains an apparent emission rate slowdown and the appearance of an unexpected sign of capacitance relaxation signal as a result of the non-monotonic shape of the potential of the Schottky-diode.

UR - http://www.scopus.com/inward/record.url?scp=85082985176&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1482/1/012003

DO - 10.1088/1742-6596/1482/1/012003

M3 - Conference article

AN - SCOPUS:85082985176

VL - 1482

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012003

T2 - 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019

Y2 - 25 November 2019 through 29 November 2019

ER -

ID: 60603543