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Parameter optimization of an electron ballistic switch in a quantum network model. / Tsurikov, D. E.; Yafyasov, A. M.
в: Journal of Computational Electronics, Том 18, № 3, 09.2019, стр. 1017-1024.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Parameter optimization of an electron ballistic switch in a quantum network model
AU - Tsurikov, D. E.
AU - Yafyasov, A. M.
PY - 2019/9
Y1 - 2019/9
N2 - Searching for the optimal parameters of nanoelectronic devices is a primal problem in modeling. We solve this problem through the example of the electron ballistic switch in a quantum network model. For this purpose, we use a computing scheme in which closed channels are taken into account. It allows calculating correctly a scattering matrix of the switch and, consequently, the electric currents flowing through it. Without loss of generality, we consider a model of a two-junction switch at room temperature. This device is characterized by localization of the controlling electric field in the domain before branching. We optimize switch parameters using a genetic algorithm. At the expense of optimization, the switch efficiency for InP, GaAs and GaSb reached 77–78%. It is established that, for the considered materials, the volt–ampere characteristics of the device are close to the linear ones at bias voltages of 0–50 mV. It allowed describing with good accuracy electron transport in the switch by means of a 3 × 3 matrix of approximate conductivity. Finally, based on the parameter optimization of the two-junction switch, we formulate the general scheme of modeling nanoelectronic devices in the framework of a quantum network formalism.
AB - Searching for the optimal parameters of nanoelectronic devices is a primal problem in modeling. We solve this problem through the example of the electron ballistic switch in a quantum network model. For this purpose, we use a computing scheme in which closed channels are taken into account. It allows calculating correctly a scattering matrix of the switch and, consequently, the electric currents flowing through it. Without loss of generality, we consider a model of a two-junction switch at room temperature. This device is characterized by localization of the controlling electric field in the domain before branching. We optimize switch parameters using a genetic algorithm. At the expense of optimization, the switch efficiency for InP, GaAs and GaSb reached 77–78%. It is established that, for the considered materials, the volt–ampere characteristics of the device are close to the linear ones at bias voltages of 0–50 mV. It allowed describing with good accuracy electron transport in the switch by means of a 3 × 3 matrix of approximate conductivity. Finally, based on the parameter optimization of the two-junction switch, we formulate the general scheme of modeling nanoelectronic devices in the framework of a quantum network formalism.
KW - Ballistic switch
KW - Closed channels
KW - Extended scattering matrix
KW - Genetic algorithm
KW - Landauer–Büttiker formalism
KW - Quantum network
KW - Landauer-Buttiker formalism
KW - DEVICES
KW - SCATTERING
UR - http://www.scopus.com/inward/record.url?scp=85066954441&partnerID=8YFLogxK
UR - http://www.mendeley.com/research/parameter-optimization-electron-ballistic-switch-quantum-network-model
U2 - 10.1007/s10825-019-01355-x
DO - 10.1007/s10825-019-01355-x
M3 - Article
AN - SCOPUS:85066954441
VL - 18
SP - 1017
EP - 1024
JO - Journal of Computational Electronics
JF - Journal of Computational Electronics
SN - 1569-8025
IS - 3
ER -
ID: 42974014