TY - JOUR

T1 - Organismic Memristive Structures With Variable Functionality for Neuroelectronics

AU - Andreeva, Natalia V.

AU - Ryndin, Eugeny A.

AU - Mazing, Dmitriy S.

AU - Vilkov, Oleg Y.

AU - Luchinin, Victor V.

N1 - Publisher Copyright: Copyright © 2022 Andreeva, Ryndin, Mazing, Vilkov and Luchinin.

PY - 2022/6/14

Y1 - 2022/6/14

N2 - In this paper, we report an approach to design nanolayered memristive compositions based on TiO2/Al2O3 bilayer structures with analog non-volatile and volatile tuning of the resistance. The structure of the TiO2 layer drives the physical mechanism underlying the non-volatile resistance switching, which can be changed from electronic to ionic, enabling the synaptic behavior emulation. The presence of the anatase phase in the amorphous TiO2 layer induces the resistive switching mechanism due to electronic processes. In this case, the switching of the resistance within the range of seven orders of magnitude is experimentally observed. In the bilayer with amorphous titanium dioxide, the participation of ionic processes in the switching mechanism results in narrowing the tuning range down to 2–3 orders of magnitude and increasing the operating voltages. In this way, a combination of TiO2/Al2O3 bilayers with inert electrodes enables synaptic behavior emulation, while active electrodes induce the neuronal behavior caused by cation density variation in the active Al2O3 layer of the structure. We consider that the proposed approach could help to explore the memristive capabilities of nanolayered compositions in a more functional way, enabling implementation of artificial neural network algorithms at the material level and simplifying neuromorphic layouts, while maintaining all benefits of neuromorphic architectures.

AB - In this paper, we report an approach to design nanolayered memristive compositions based on TiO2/Al2O3 bilayer structures with analog non-volatile and volatile tuning of the resistance. The structure of the TiO2 layer drives the physical mechanism underlying the non-volatile resistance switching, which can be changed from electronic to ionic, enabling the synaptic behavior emulation. The presence of the anatase phase in the amorphous TiO2 layer induces the resistive switching mechanism due to electronic processes. In this case, the switching of the resistance within the range of seven orders of magnitude is experimentally observed. In the bilayer with amorphous titanium dioxide, the participation of ionic processes in the switching mechanism results in narrowing the tuning range down to 2–3 orders of magnitude and increasing the operating voltages. In this way, a combination of TiO2/Al2O3 bilayers with inert electrodes enables synaptic behavior emulation, while active electrodes induce the neuronal behavior caused by cation density variation in the active Al2O3 layer of the structure. We consider that the proposed approach could help to explore the memristive capabilities of nanolayered compositions in a more functional way, enabling implementation of artificial neural network algorithms at the material level and simplifying neuromorphic layouts, while maintaining all benefits of neuromorphic architectures.

KW - analog non-volatile and volatile tuning of the resistance

KW - atomic layer deposition

KW - emulation of synaptic plasticity and neural activity

KW - multilevel memristor

KW - nanolayered memristive compositions

UR - http://www.scopus.com/inward/record.url?scp=85133506692&partnerID=8YFLogxK

U2 - 10.3389/fnins.2022.913618

DO - 10.3389/fnins.2022.913618

M3 - Article

AN - SCOPUS:85133506692

VL - 16

JO - Frontiers in Neuroscience

JF - Frontiers in Neuroscience

SN - 1662-453X

M1 - 913618

ER -