TY - JOUR

T1 - Optical properties of bulk gallium nitride single crystals grown by chloride–hydride vapor-phase epitaxy

AU - Агекян, Вадим Фадеевич

AU - Борисов, Евгений Вадимович

AU - Серов, Алексей Юрьевич

AU - Философов, Николай Глебович

PY - 2017

Y1 - 2017

N2 - A gallium nitride crystal 5 mm in thickness was grown by chloride–hydride vapor-phase epitaxy on a sapphire substrate, from which the crystal separated during cooling. At an early stage, a three-dimensional growth mode was implemented, followed by a switch to a two-dimensional mode. Spectra of exciton reflection, exciton luminescence, and Raman scattering are studied in several regions characteristic of the sample. Analysis of these spectra and comparison with previously obtained data for thin epitaxial GaN layers with a wide range of silicon doping enabled conclusions about the quality of the crystal lattice in these characteristic regions.

AB - A gallium nitride crystal 5 mm in thickness was grown by chloride–hydride vapor-phase epitaxy on a sapphire substrate, from which the crystal separated during cooling. At an early stage, a three-dimensional growth mode was implemented, followed by a switch to a two-dimensional mode. Spectra of exciton reflection, exciton luminescence, and Raman scattering are studied in several regions characteristic of the sample. Analysis of these spectra and comparison with previously obtained data for thin epitaxial GaN layers with a wide range of silicon doping enabled conclusions about the quality of the crystal lattice in these characteristic regions.

U2 - 10.1134/S1063783417120022

DO - 10.1134/S1063783417120022

M3 - Article

VL - 59

SP - 2418

EP - 2422

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 12

ER -