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Optical detection of spin-filter effect for electron spin polarimetry. / Li, X.; Tereshchenko, O.E.; Majee, S.; Lampel, G.; Lassailly, Y.; Paget, D.; Peretti, J.

в: Applied Physics Letters, Том 105, № 052402, 2014.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Li, X, Tereshchenko, OE, Majee, S, Lampel, G, Lassailly, Y, Paget, D & Peretti, J 2014, 'Optical detection of spin-filter effect for electron spin polarimetry', Applied Physics Letters, Том. 105, № 052402.

APA

Li, X., Tereshchenko, O. E., Majee, S., Lampel, G., Lassailly, Y., Paget, D., & Peretti, J. (2014). Optical detection of spin-filter effect for electron spin polarimetry. Applied Physics Letters, 105(052402).

Vancouver

Li X, Tereshchenko OE, Majee S, Lampel G, Lassailly Y, Paget D и пр. Optical detection of spin-filter effect for electron spin polarimetry. Applied Physics Letters. 2014;105(052402).

Author

Li, X. ; Tereshchenko, O.E. ; Majee, S. ; Lampel, G. ; Lassailly, Y. ; Paget, D. ; Peretti, J. / Optical detection of spin-filter effect for electron spin polarimetry. в: Applied Physics Letters. 2014 ; Том 105, № 052402.

BibTeX

@article{71ebd27915244efdbfad0ad68b0d35ca,
title = "Optical detection of spin-filter effect for electron spin polarimetry",
abstract = "We have monitored the cathodoluminescence (CL) emitted upon injection of free electrons into a hybrid structure consisting of a thin magnetic Fe layer deposited on a p-GaAs substrate, in which InGaAs quantum wells are embedded. Electrons transmitted through the unbiased metal/semiconductor junction recombine radiatively in the quantum wells. Because of the electron spin-filtering across the Fe/GaAs structure, the CL intensity, collected from the backside, is found to depend on the relative orientation between the injected electronic spin polarization and the Fe layer magnetization. The spin asymmetry of the CL intensity in such junction provides a compact optical method for measuring spin polarization of free electrons beams or of hot electrons in solid-state devices. {\textcopyright} 2014 AIP Publishing LLC.",
author = "X. Li and O.E. Tereshchenko and S. Majee and G. Lampel and Y. Lassailly and D. Paget and J. Peretti",
year = "2014",
language = "не определен",
volume = "105",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "052402",

}

RIS

TY - JOUR

T1 - Optical detection of spin-filter effect for electron spin polarimetry

AU - Li, X.

AU - Tereshchenko, O.E.

AU - Majee, S.

AU - Lampel, G.

AU - Lassailly, Y.

AU - Paget, D.

AU - Peretti, J.

PY - 2014

Y1 - 2014

N2 - We have monitored the cathodoluminescence (CL) emitted upon injection of free electrons into a hybrid structure consisting of a thin magnetic Fe layer deposited on a p-GaAs substrate, in which InGaAs quantum wells are embedded. Electrons transmitted through the unbiased metal/semiconductor junction recombine radiatively in the quantum wells. Because of the electron spin-filtering across the Fe/GaAs structure, the CL intensity, collected from the backside, is found to depend on the relative orientation between the injected electronic spin polarization and the Fe layer magnetization. The spin asymmetry of the CL intensity in such junction provides a compact optical method for measuring spin polarization of free electrons beams or of hot electrons in solid-state devices. © 2014 AIP Publishing LLC.

AB - We have monitored the cathodoluminescence (CL) emitted upon injection of free electrons into a hybrid structure consisting of a thin magnetic Fe layer deposited on a p-GaAs substrate, in which InGaAs quantum wells are embedded. Electrons transmitted through the unbiased metal/semiconductor junction recombine radiatively in the quantum wells. Because of the electron spin-filtering across the Fe/GaAs structure, the CL intensity, collected from the backside, is found to depend on the relative orientation between the injected electronic spin polarization and the Fe layer magnetization. The spin asymmetry of the CL intensity in such junction provides a compact optical method for measuring spin polarization of free electrons beams or of hot electrons in solid-state devices. © 2014 AIP Publishing LLC.

M3 - статья

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 052402

ER -

ID: 5720010