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Optical and luminescence properties of laser-oxidized porous silicon doped with erbium and ytterbium ions. / Grigor'ev, L. V.; Solomin, S. O.; Polyakov, D. S.; Veǐko, V. P.; Mikhaǐlov, A. V.

в: Journal of Optical Technology (A Translation of Opticheskii Zhurnal), Том 83, № 7, 01.07.2016, стр. 429-433.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Grigor'ev, LV, Solomin, SO, Polyakov, DS, Veǐko, VP & Mikhaǐlov, AV 2016, 'Optical and luminescence properties of laser-oxidized porous silicon doped with erbium and ytterbium ions', Journal of Optical Technology (A Translation of Opticheskii Zhurnal), Том. 83, № 7, стр. 429-433. https://doi.org/10.1364/JOT.83.000429

APA

Grigor'ev, L. V., Solomin, S. O., Polyakov, D. S., Veǐko, V. P., & Mikhaǐlov, A. V. (2016). Optical and luminescence properties of laser-oxidized porous silicon doped with erbium and ytterbium ions. Journal of Optical Technology (A Translation of Opticheskii Zhurnal), 83(7), 429-433. https://doi.org/10.1364/JOT.83.000429

Vancouver

Grigor'ev LV, Solomin SO, Polyakov DS, Veǐko VP, Mikhaǐlov AV. Optical and luminescence properties of laser-oxidized porous silicon doped with erbium and ytterbium ions. Journal of Optical Technology (A Translation of Opticheskii Zhurnal). 2016 Июль 1;83(7):429-433. https://doi.org/10.1364/JOT.83.000429

Author

Grigor'ev, L. V. ; Solomin, S. O. ; Polyakov, D. S. ; Veǐko, V. P. ; Mikhaǐlov, A. V. / Optical and luminescence properties of laser-oxidized porous silicon doped with erbium and ytterbium ions. в: Journal of Optical Technology (A Translation of Opticheskii Zhurnal). 2016 ; Том 83, № 7. стр. 429-433.

BibTeX

@article{a354c96a8e104f11ab268dc9fd1de23e,
title = "Optical and luminescence properties of laser-oxidized porous silicon doped with erbium and ytterbium ions",
abstract = "This paper presents a new method of laser-stimulated oxidation of a porous silicon layer with pore sizes of 5-10 nm that uses the strong-absorption effect of radiation by a semiconductor. The results of a study of the optical properties of a thin film of laser-oxidized porous silicon of various morphologies, doped with erbium or ytterbium ions, are presented. The transmittance of the layer of interest in the wavelength range from 1.2 to 2.0 μm was at least 66%.",
author = "Grigor'ev, {L. V.} and Solomin, {S. O.} and Polyakov, {D. S.} and Veǐko, {V. P.} and Mikhaǐlov, {A. V.}",
note = "Publisher Copyright: {\textcopyright} 2017 Optical Society of America.",
year = "2016",
month = jul,
day = "1",
doi = "10.1364/JOT.83.000429",
language = "English",
volume = "83",
pages = "429--433",
journal = "Journal of Optical Technology (A Translation of Opticheskii Zhurnal)",
issn = "1070-9762",
publisher = "The Optical Society",
number = "7",

}

RIS

TY - JOUR

T1 - Optical and luminescence properties of laser-oxidized porous silicon doped with erbium and ytterbium ions

AU - Grigor'ev, L. V.

AU - Solomin, S. O.

AU - Polyakov, D. S.

AU - Veǐko, V. P.

AU - Mikhaǐlov, A. V.

N1 - Publisher Copyright: © 2017 Optical Society of America.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - This paper presents a new method of laser-stimulated oxidation of a porous silicon layer with pore sizes of 5-10 nm that uses the strong-absorption effect of radiation by a semiconductor. The results of a study of the optical properties of a thin film of laser-oxidized porous silicon of various morphologies, doped with erbium or ytterbium ions, are presented. The transmittance of the layer of interest in the wavelength range from 1.2 to 2.0 μm was at least 66%.

AB - This paper presents a new method of laser-stimulated oxidation of a porous silicon layer with pore sizes of 5-10 nm that uses the strong-absorption effect of radiation by a semiconductor. The results of a study of the optical properties of a thin film of laser-oxidized porous silicon of various morphologies, doped with erbium or ytterbium ions, are presented. The transmittance of the layer of interest in the wavelength range from 1.2 to 2.0 μm was at least 66%.

UR - http://www.scopus.com/inward/record.url?scp=85011840981&partnerID=8YFLogxK

U2 - 10.1364/JOT.83.000429

DO - 10.1364/JOT.83.000429

M3 - Article

AN - SCOPUS:85011840981

VL - 83

SP - 429

EP - 433

JO - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

JF - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

SN - 1070-9762

IS - 7

ER -

ID: 86116942