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Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels. / Agekyan, V.F.; Borisov, E.V.; Vorobjev, L.E.; Melentyev, G.A.; Nykänen, H.; Riuttanen, L.; Serov, A.Y.; Suihkonen, S.; Svensk, O.; Filisofov, N.G.; Shalygin, V.A.; Shelukhin, L.A.

в: Physics of the Solid State, Том 57, № 4, 2015, стр. 787-793.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Agekyan, VF, Borisov, EV, Vorobjev, LE, Melentyev, GA, Nykänen, H, Riuttanen, L, Serov, AY, Suihkonen, S, Svensk, O, Filisofov, NG, Shalygin, VA & Shelukhin, LA 2015, 'Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels', Physics of the Solid State, Том. 57, № 4, стр. 787-793. https://doi.org/10.1134/S1063783415040046

APA

Agekyan, V. F., Borisov, E. V., Vorobjev, L. E., Melentyev, G. A., Nykänen, H., Riuttanen, L., Serov, A. Y., Suihkonen, S., Svensk, O., Filisofov, N. G., Shalygin, V. A., & Shelukhin, L. A. (2015). Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels. Physics of the Solid State, 57(4), 787-793. https://doi.org/10.1134/S1063783415040046

Vancouver

Agekyan VF, Borisov EV, Vorobjev LE, Melentyev GA, Nykänen H, Riuttanen L и пр. Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels. Physics of the Solid State. 2015;57(4):787-793. https://doi.org/10.1134/S1063783415040046

Author

Agekyan, V.F. ; Borisov, E.V. ; Vorobjev, L.E. ; Melentyev, G.A. ; Nykänen, H. ; Riuttanen, L. ; Serov, A.Y. ; Suihkonen, S. ; Svensk, O. ; Filisofov, N.G. ; Shalygin, V.A. ; Shelukhin, L.A. / Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels. в: Physics of the Solid State. 2015 ; Том 57, № 4. стр. 787-793.

BibTeX

@article{b0414e94ffd2442a8b87e59134ac7961,
title = "Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels",
abstract = "The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown on sapphire have been studied. The studies have been performed over a wide range of silicon concentrations on each side of the Mott transition. The critical concentrations of Si atoms corresponding to the formation of an impurity band in gallium nitride (∼2.5 × 1018 cm−3) and to the overlap of the impurity band with the conduction band (∼2 × 1019 cm−3) have been refined. The maximum of the photoluminescence spectrum shifts nonmonotonically with increasing doping level. This shift is determined by two factors: (1) an increase in the exchange interaction leading to a decrease in the energy gap width and (2) a change in the radiation mechanism as the donor concentration increases. The temperature dependence of the exciton luminescence with participating optical phonons has been studied. The energies of phonon-plasmon modes in GaN: Si layers with different silicon concentrations have been measured using Raman spectroscop",
author = "V.F. Agekyan and E.V. Borisov and L.E. Vorobjev and G.A. Melentyev and H. Nyk{\"a}nen and L. Riuttanen and A.Y. Serov and S. Suihkonen and O. Svensk and N.G. Filisofov and V.A. Shalygin and L.A. Shelukhin",
year = "2015",
doi = "10.1134/S1063783415040046",
language = "English",
volume = "57",
pages = "787--793",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "4",

}

RIS

TY - JOUR

T1 - Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels

AU - Agekyan, V.F.

AU - Borisov, E.V.

AU - Vorobjev, L.E.

AU - Melentyev, G.A.

AU - Nykänen, H.

AU - Riuttanen, L.

AU - Serov, A.Y.

AU - Suihkonen, S.

AU - Svensk, O.

AU - Filisofov, N.G.

AU - Shalygin, V.A.

AU - Shelukhin, L.A.

PY - 2015

Y1 - 2015

N2 - The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown on sapphire have been studied. The studies have been performed over a wide range of silicon concentrations on each side of the Mott transition. The critical concentrations of Si atoms corresponding to the formation of an impurity band in gallium nitride (∼2.5 × 1018 cm−3) and to the overlap of the impurity band with the conduction band (∼2 × 1019 cm−3) have been refined. The maximum of the photoluminescence spectrum shifts nonmonotonically with increasing doping level. This shift is determined by two factors: (1) an increase in the exchange interaction leading to a decrease in the energy gap width and (2) a change in the radiation mechanism as the donor concentration increases. The temperature dependence of the exciton luminescence with participating optical phonons has been studied. The energies of phonon-plasmon modes in GaN: Si layers with different silicon concentrations have been measured using Raman spectroscop

AB - The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown on sapphire have been studied. The studies have been performed over a wide range of silicon concentrations on each side of the Mott transition. The critical concentrations of Si atoms corresponding to the formation of an impurity band in gallium nitride (∼2.5 × 1018 cm−3) and to the overlap of the impurity band with the conduction band (∼2 × 1019 cm−3) have been refined. The maximum of the photoluminescence spectrum shifts nonmonotonically with increasing doping level. This shift is determined by two factors: (1) an increase in the exchange interaction leading to a decrease in the energy gap width and (2) a change in the radiation mechanism as the donor concentration increases. The temperature dependence of the exciton luminescence with participating optical phonons has been studied. The energies of phonon-plasmon modes in GaN: Si layers with different silicon concentrations have been measured using Raman spectroscop

U2 - 10.1134/S1063783415040046

DO - 10.1134/S1063783415040046

M3 - Article

VL - 57

SP - 787

EP - 793

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 4

ER -

ID: 4007068