Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
One-stage pulsed laser deposition of conductive zinc oxysulfide layers. / Bereznev, Sergei; Kocharyan, Hrachya; Maticiuc, Natalia; Naidu, Revathi; Volobujeva, Olga; Tverjanovich, Andrey; Kois, Julia.
в: Applied Surface Science, Том 425, 15.12.2017, стр. 722-727.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - One-stage pulsed laser deposition of conductive zinc oxysulfide layers
AU - Bereznev, Sergei
AU - Kocharyan, Hrachya
AU - Maticiuc, Natalia
AU - Naidu, Revathi
AU - Volobujeva, Olga
AU - Tverjanovich, Andrey
AU - Kois, Julia
PY - 2017/12/15
Y1 - 2017/12/15
N2 - Zinc oxysulfide – Zn(O,S) is one of the prospective materials for substitution of conventional CdS buffer layer in complete optoelectronic devices due to its optimal bandgap and low toxicity. In this work Zn(O,S) thin films have been prepared by one-step pulsed laser deposition technique. The films with a thickness of 650 nm were deposited onto the FTO/glass substrates at different substrate temperatures from room temperature to 400 °C. Zn(O,S) layers were characterized by means of scanning electron microscopy, energy dispersive spectroscopy, Raman, X-ray diffraction, UV–vis spectroscopy and Van der Pauw technique. It was found, that obtained Zn(O,S) layers are mainly polycrystalline, highly uniform, transparent, electrically conductive and demonstrate good adhesion to the FTO/glass substrates. In addition, we show that elemental composition of PLD Zn(O,S) films depends on the substrate temperature. For the first time high quality single phase conductive Zn(O,S) layers were prepared by one stage PLD in high vacuum at relatively low temperature 200 °C without any post treatment. The properties of prepared Zn(O,S) films suggest that these films can be applied as buffer layer in optoelectronic devices.
AB - Zinc oxysulfide – Zn(O,S) is one of the prospective materials for substitution of conventional CdS buffer layer in complete optoelectronic devices due to its optimal bandgap and low toxicity. In this work Zn(O,S) thin films have been prepared by one-step pulsed laser deposition technique. The films with a thickness of 650 nm were deposited onto the FTO/glass substrates at different substrate temperatures from room temperature to 400 °C. Zn(O,S) layers were characterized by means of scanning electron microscopy, energy dispersive spectroscopy, Raman, X-ray diffraction, UV–vis spectroscopy and Van der Pauw technique. It was found, that obtained Zn(O,S) layers are mainly polycrystalline, highly uniform, transparent, electrically conductive and demonstrate good adhesion to the FTO/glass substrates. In addition, we show that elemental composition of PLD Zn(O,S) films depends on the substrate temperature. For the first time high quality single phase conductive Zn(O,S) layers were prepared by one stage PLD in high vacuum at relatively low temperature 200 °C without any post treatment. The properties of prepared Zn(O,S) films suggest that these films can be applied as buffer layer in optoelectronic devices.
KW - Buffer layer
KW - Optoelectronic
KW - Pulsed laser deposition
KW - Zn(O,S)
UR - http://www.scopus.com/inward/record.url?scp=85024377903&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2017.07.078
DO - 10.1016/j.apsusc.2017.07.078
M3 - Article
AN - SCOPUS:85024377903
VL - 425
SP - 722
EP - 727
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -
ID: 32902215