Standard

Observation of transition metals at shunt locations in multicrystalline silicon solar cells. / Buonassisi, T.; Vyvenko, O. F.; Istratov, A. A.; Weber, E. R.; Hahn, G.; Sontag, D.; Rakotoniaina, J. P.; Breitenstein, O.; Isenberg, J.; Schindler, R.

в: Journal of Applied Physics, Том 95, № 3, 01.02.2004, стр. 1556-1561.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Buonassisi, T, Vyvenko, OF, Istratov, AA, Weber, ER, Hahn, G, Sontag, D, Rakotoniaina, JP, Breitenstein, O, Isenberg, J & Schindler, R 2004, 'Observation of transition metals at shunt locations in multicrystalline silicon solar cells', Journal of Applied Physics, Том. 95, № 3, стр. 1556-1561. https://doi.org/10.1063/1.1636252

APA

Buonassisi, T., Vyvenko, O. F., Istratov, A. A., Weber, E. R., Hahn, G., Sontag, D., Rakotoniaina, J. P., Breitenstein, O., Isenberg, J., & Schindler, R. (2004). Observation of transition metals at shunt locations in multicrystalline silicon solar cells. Journal of Applied Physics, 95(3), 1556-1561. https://doi.org/10.1063/1.1636252

Vancouver

Buonassisi T, Vyvenko OF, Istratov AA, Weber ER, Hahn G, Sontag D и пр. Observation of transition metals at shunt locations in multicrystalline silicon solar cells. Journal of Applied Physics. 2004 Февр. 1;95(3):1556-1561. https://doi.org/10.1063/1.1636252

Author

Buonassisi, T. ; Vyvenko, O. F. ; Istratov, A. A. ; Weber, E. R. ; Hahn, G. ; Sontag, D. ; Rakotoniaina, J. P. ; Breitenstein, O. ; Isenberg, J. ; Schindler, R. / Observation of transition metals at shunt locations in multicrystalline silicon solar cells. в: Journal of Applied Physics. 2004 ; Том 95, № 3. стр. 1556-1561.

BibTeX

@article{7926fd9d613649fa87df4f4f2ec1bf77,
title = "Observation of transition metals at shunt locations in multicrystalline silicon solar cells",
abstract = "An experimental procedure was demosntrated to detect transition metals at shunting locations in solar cells, involving lock-in thermography, SR-LBIC, XBIC, and μ-XRF. Thus, transition metals were found to be present in higher than average concentrations at both shunts analyzed in the study. Such results can be explained most effectively by the presence of field charges at the cores of the channels, which cause local band bending in the vicinity of the channel to occur, thus attracting minority charges to the channels.",
author = "T. Buonassisi and Vyvenko, {O. F.} and Istratov, {A. A.} and Weber, {E. R.} and G. Hahn and D. Sontag and Rakotoniaina, {J. P.} and O. Breitenstein and J. Isenberg and R. Schindler",
year = "2004",
month = feb,
day = "1",
doi = "10.1063/1.1636252",
language = "English",
volume = "95",
pages = "1556--1561",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "3",

}

RIS

TY - JOUR

T1 - Observation of transition metals at shunt locations in multicrystalline silicon solar cells

AU - Buonassisi, T.

AU - Vyvenko, O. F.

AU - Istratov, A. A.

AU - Weber, E. R.

AU - Hahn, G.

AU - Sontag, D.

AU - Rakotoniaina, J. P.

AU - Breitenstein, O.

AU - Isenberg, J.

AU - Schindler, R.

PY - 2004/2/1

Y1 - 2004/2/1

N2 - An experimental procedure was demosntrated to detect transition metals at shunting locations in solar cells, involving lock-in thermography, SR-LBIC, XBIC, and μ-XRF. Thus, transition metals were found to be present in higher than average concentrations at both shunts analyzed in the study. Such results can be explained most effectively by the presence of field charges at the cores of the channels, which cause local band bending in the vicinity of the channel to occur, thus attracting minority charges to the channels.

AB - An experimental procedure was demosntrated to detect transition metals at shunting locations in solar cells, involving lock-in thermography, SR-LBIC, XBIC, and μ-XRF. Thus, transition metals were found to be present in higher than average concentrations at both shunts analyzed in the study. Such results can be explained most effectively by the presence of field charges at the cores of the channels, which cause local band bending in the vicinity of the channel to occur, thus attracting minority charges to the channels.

UR - http://www.scopus.com/inward/record.url?scp=10744232470&partnerID=8YFLogxK

U2 - 10.1063/1.1636252

DO - 10.1063/1.1636252

M3 - Article

AN - SCOPUS:10744232470

VL - 95

SP - 1556

EP - 1561

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -

ID: 87814525