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Numerical simulations of electron transport in nanowires near thresholds. / Kabardov, M.M.; Sharkova, N.M.

Proceedings of the International Conference Days on Diffraction 2015, DD 2015. 2015. стр. 150-153.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная

Harvard

Kabardov, MM & Sharkova, NM 2015, Numerical simulations of electron transport in nanowires near thresholds. в Proceedings of the International Conference Days on Diffraction 2015, DD 2015. стр. 150-153. https://doi.org/10.1109/DD.2015.7354850

APA

Kabardov, M. M., & Sharkova, N. M. (2015). Numerical simulations of electron transport in nanowires near thresholds. в Proceedings of the International Conference Days on Diffraction 2015, DD 2015 (стр. 150-153) https://doi.org/10.1109/DD.2015.7354850

Vancouver

Kabardov MM, Sharkova NM. Numerical simulations of electron transport in nanowires near thresholds. в Proceedings of the International Conference Days on Diffraction 2015, DD 2015. 2015. стр. 150-153 https://doi.org/10.1109/DD.2015.7354850

Author

Kabardov, M.M. ; Sharkova, N.M. / Numerical simulations of electron transport in nanowires near thresholds. Proceedings of the International Conference Days on Diffraction 2015, DD 2015. 2015. стр. 150-153

BibTeX

@inproceedings{330903c16f954bd1922929d91ad228d8,
title = "Numerical simulations of electron transport in nanowires near thresholds",
abstract = "{\textcopyright} 2015 IEEE.The study and design of electronic components, based on ballistic electron transport in nanowires, recently show steep increase of interest. The components can be field effect transistors, resonant tunneling, diodes, lasers, cubits, etc. Previously we carried out numerical simulations of electron transport for energies far from the thresholds (in the case of multichannel scattering). Here we present the results of numerical simulations of electron transport in nanowires near a threshold and compare the conventional and augmented scattering matrices elements.",
author = "M.M. Kabardov and N.M. Sharkova",
year = "2015",
doi = "10.1109/DD.2015.7354850",
language = "English",
isbn = "9781467386357",
pages = "150--153",
booktitle = "Proceedings of the International Conference Days on Diffraction 2015, DD 2015",

}

RIS

TY - GEN

T1 - Numerical simulations of electron transport in nanowires near thresholds

AU - Kabardov, M.M.

AU - Sharkova, N.M.

PY - 2015

Y1 - 2015

N2 - © 2015 IEEE.The study and design of electronic components, based on ballistic electron transport in nanowires, recently show steep increase of interest. The components can be field effect transistors, resonant tunneling, diodes, lasers, cubits, etc. Previously we carried out numerical simulations of electron transport for energies far from the thresholds (in the case of multichannel scattering). Here we present the results of numerical simulations of electron transport in nanowires near a threshold and compare the conventional and augmented scattering matrices elements.

AB - © 2015 IEEE.The study and design of electronic components, based on ballistic electron transport in nanowires, recently show steep increase of interest. The components can be field effect transistors, resonant tunneling, diodes, lasers, cubits, etc. Previously we carried out numerical simulations of electron transport for energies far from the thresholds (in the case of multichannel scattering). Here we present the results of numerical simulations of electron transport in nanowires near a threshold and compare the conventional and augmented scattering matrices elements.

U2 - 10.1109/DD.2015.7354850

DO - 10.1109/DD.2015.7354850

M3 - Conference contribution

SN - 9781467386357

SP - 150

EP - 153

BT - Proceedings of the International Conference Days on Diffraction 2015, DD 2015

ER -

ID: 4015167