Standard

Numerical modeling of indirect excitons in double quantum wells in an external electric field. / Belov, P. A.

в: Journal of Physics: Conference Series, Том 1199, № 1, 012018, 17.04.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Belov, PA 2019, 'Numerical modeling of indirect excitons in double quantum wells in an external electric field', Journal of Physics: Conference Series, Том. 1199, № 1, 012018. https://doi.org/10.1088/1742-6596/1199/1/012018

APA

Belov, P. A. (2019). Numerical modeling of indirect excitons in double quantum wells in an external electric field. Journal of Physics: Conference Series, 1199(1), [012018]. https://doi.org/10.1088/1742-6596/1199/1/012018

Vancouver

Belov PA. Numerical modeling of indirect excitons in double quantum wells in an external electric field. Journal of Physics: Conference Series. 2019 Апр. 17;1199(1). 012018. https://doi.org/10.1088/1742-6596/1199/1/012018

Author

Belov, P. A. / Numerical modeling of indirect excitons in double quantum wells in an external electric field. в: Journal of Physics: Conference Series. 2019 ; Том 1199, № 1.

BibTeX

@article{bfec232acd8c4733a3421861171c9790,
title = "Numerical modeling of indirect excitons in double quantum wells in an external electric field",
abstract = "The ground state of an exciton in the GaAs-based double quantum well structure in an external electric field is calculated by the direct numerical solution of the three-dimensional Schr{\"o}dinger equation. A formation of the indirect exciton is demonstrated by the study of the localization of the exciton wave function in the double quantum well structure for different electric field strengths. A relatively slow radiative decay rate of the indirect exciton is observed.",
author = "Belov, {P. A.}",
year = "2019",
month = apr,
day = "17",
doi = "10.1088/1742-6596/1199/1/012018",
language = "English",
volume = "1199",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 ; Conference date: 26-11-2018 Through 30-11-2018",

}

RIS

TY - JOUR

T1 - Numerical modeling of indirect excitons in double quantum wells in an external electric field

AU - Belov, P. A.

PY - 2019/4/17

Y1 - 2019/4/17

N2 - The ground state of an exciton in the GaAs-based double quantum well structure in an external electric field is calculated by the direct numerical solution of the three-dimensional Schrödinger equation. A formation of the indirect exciton is demonstrated by the study of the localization of the exciton wave function in the double quantum well structure for different electric field strengths. A relatively slow radiative decay rate of the indirect exciton is observed.

AB - The ground state of an exciton in the GaAs-based double quantum well structure in an external electric field is calculated by the direct numerical solution of the three-dimensional Schrödinger equation. A formation of the indirect exciton is demonstrated by the study of the localization of the exciton wave function in the double quantum well structure for different electric field strengths. A relatively slow radiative decay rate of the indirect exciton is observed.

UR - http://www.scopus.com/inward/record.url?scp=85065603441&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1199/1/012018

DO - 10.1088/1742-6596/1199/1/012018

M3 - Conference article

AN - SCOPUS:85065603441

VL - 1199

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012018

T2 - 20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018

Y2 - 26 November 2018 through 30 November 2018

ER -

ID: 49391984