Standard

Nanostructured porous silicon and graphene-based materials for PETE electrode synthesys. / Smerdov, Rostislav S.; Mustafaev, Alexander S.; Soukhomlinov, Vladimir; Spivak, Yulia M.; Moshnikov, Vyacheslav A.

2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering : Proceedings. ред. / S. Shaposhnikov. Institute of Electrical and Electronics Engineers Inc., 2019. стр. 786-790 8657196 (IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference ).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаяРецензирование

Harvard

Smerdov, RS, Mustafaev, AS, Soukhomlinov, V, Spivak, YM & Moshnikov, VA 2019, Nanostructured porous silicon and graphene-based materials for PETE electrode synthesys. в S Shaposhnikov (ред.), 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering : Proceedings., 8657196, IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference , Institute of Electrical and Electronics Engineers Inc., стр. 786-790, 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering, ElConRus 2019, Saint Petersburg and Moscow, Российская Федерация, 28/01/19. https://doi.org/10.1109/EIConRus.2019.8657196

APA

Smerdov, R. S., Mustafaev, A. S., Soukhomlinov, V., Spivak, Y. M., & Moshnikov, V. A. (2019). Nanostructured porous silicon and graphene-based materials for PETE electrode synthesys. в S. Shaposhnikov (Ред.), 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering : Proceedings (стр. 786-790). [8657196] (IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference ). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EIConRus.2019.8657196

Vancouver

Smerdov RS, Mustafaev AS, Soukhomlinov V, Spivak YM, Moshnikov VA. Nanostructured porous silicon and graphene-based materials for PETE electrode synthesys. в Shaposhnikov S, Редактор, 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering : Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. стр. 786-790. 8657196. (IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference ). https://doi.org/10.1109/EIConRus.2019.8657196

Author

Smerdov, Rostislav S. ; Mustafaev, Alexander S. ; Soukhomlinov, Vladimir ; Spivak, Yulia M. ; Moshnikov, Vyacheslav A. / Nanostructured porous silicon and graphene-based materials for PETE electrode synthesys. 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering : Proceedings. Редактор / S. Shaposhnikov. Institute of Electrical and Electronics Engineers Inc., 2019. стр. 786-790 (IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference ).

BibTeX

@inproceedings{a9c18132ab694919a889cd329a5ab97f,
title = "Nanostructured porous silicon and graphene-based materials for PETE electrode synthesys",
abstract = "The challenges in front of PETE (photon-enhanced thermionic emission for solar concentrators) electrode synthesis are considered in this study. Composite PS (porous silicon) layers are suggested as a perspective material for PETE cathode realization due to the possibility to modify their band gap in a wide range from 1 to 3 eV and extensive capabilities for surface functionalization allowing for the variability of electron work function from the surface of the material. UV-Vis spectroscopy was used in order to characterize the surface structure of PS/Ag layers. The efficiency of thermionic energy conversion (TEC) is also analyzed, the problem of low electron work function material synthesis is acknowledged. In that regard the dynamic cesium flow technique is realized in order to create a novel nanostructured anode based on Ni covered with Cs - intercalated graphene layers. The electron work function lowering effect (up to 1 eV) is observed within this structure, leading to an overall increase in TEC efficiency to the value of 20% at ТЕ = 1570 K and ТС = 670 K.",
keywords = "Band gap, Graphene, Nanostructured materials, PETE, Porous silicon, UV/Vis spectroscopy",
author = "Smerdov, {Rostislav S.} and Mustafaev, {Alexander S.} and Vladimir Soukhomlinov and Spivak, {Yulia M.} and Moshnikov, {Vyacheslav A.}",
year = "2019",
month = feb,
day = "28",
doi = "10.1109/EIConRus.2019.8657196",
language = "English",
isbn = "9781728103402",
series = "IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference ",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "786--790",
editor = "S. Shaposhnikov",
booktitle = "2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering",
address = "United States",
note = "2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering, ElConRus 2019 ; Conference date: 28-01-2019 Through 30-01-2019",

}

RIS

TY - GEN

T1 - Nanostructured porous silicon and graphene-based materials for PETE electrode synthesys

AU - Smerdov, Rostislav S.

AU - Mustafaev, Alexander S.

AU - Soukhomlinov, Vladimir

AU - Spivak, Yulia M.

AU - Moshnikov, Vyacheslav A.

PY - 2019/2/28

Y1 - 2019/2/28

N2 - The challenges in front of PETE (photon-enhanced thermionic emission for solar concentrators) electrode synthesis are considered in this study. Composite PS (porous silicon) layers are suggested as a perspective material for PETE cathode realization due to the possibility to modify their band gap in a wide range from 1 to 3 eV and extensive capabilities for surface functionalization allowing for the variability of electron work function from the surface of the material. UV-Vis spectroscopy was used in order to characterize the surface structure of PS/Ag layers. The efficiency of thermionic energy conversion (TEC) is also analyzed, the problem of low electron work function material synthesis is acknowledged. In that regard the dynamic cesium flow technique is realized in order to create a novel nanostructured anode based on Ni covered with Cs - intercalated graphene layers. The electron work function lowering effect (up to 1 eV) is observed within this structure, leading to an overall increase in TEC efficiency to the value of 20% at ТЕ = 1570 K and ТС = 670 K.

AB - The challenges in front of PETE (photon-enhanced thermionic emission for solar concentrators) electrode synthesis are considered in this study. Composite PS (porous silicon) layers are suggested as a perspective material for PETE cathode realization due to the possibility to modify their band gap in a wide range from 1 to 3 eV and extensive capabilities for surface functionalization allowing for the variability of electron work function from the surface of the material. UV-Vis spectroscopy was used in order to characterize the surface structure of PS/Ag layers. The efficiency of thermionic energy conversion (TEC) is also analyzed, the problem of low electron work function material synthesis is acknowledged. In that regard the dynamic cesium flow technique is realized in order to create a novel nanostructured anode based on Ni covered with Cs - intercalated graphene layers. The electron work function lowering effect (up to 1 eV) is observed within this structure, leading to an overall increase in TEC efficiency to the value of 20% at ТЕ = 1570 K and ТС = 670 K.

KW - Band gap

KW - Graphene

KW - Nanostructured materials

KW - PETE

KW - Porous silicon

KW - UV/Vis spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85063482862&partnerID=8YFLogxK

U2 - 10.1109/EIConRus.2019.8657196

DO - 10.1109/EIConRus.2019.8657196

M3 - Conference contribution

AN - SCOPUS:85063482862

SN - 9781728103402

T3 - IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference

SP - 786

EP - 790

BT - 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering

A2 - Shaposhnikov, S.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering, ElConRus 2019

Y2 - 28 January 2019 through 30 January 2019

ER -

ID: 47671031