Nanoscale Electrically Driven Light Source Based on Hybrid Semiconductor/Metal Nanoantenna

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Nanoscale Electrically Driven Light Source Based on Hybrid Semiconductor/Metal Nanoantenna. / Lebedev, Denis V.; Shkoldin, Vitaly A.; Mozharov, Alexey M.; Larin, Artem O.; Permyakov, Dmitry V.; Samusev, Anton K.; Petukhov, Anatoly E.; Golubok, Alexander O.; Arkhipov, Alexander V.; Mukhin, Ivan S.

в: Journal of Physical Chemistry Letters, Том 13, № 20, 19.05.2022, стр. 4612-4620.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Author

Lebedev, Denis V. ; Shkoldin, Vitaly A. ; Mozharov, Alexey M. ; Larin, Artem O. ; Permyakov, Dmitry V. ; Samusev, Anton K. ; Petukhov, Anatoly E. ; Golubok, Alexander O. ; Arkhipov, Alexander V. ; Mukhin, Ivan S. / Nanoscale Electrically Driven Light Source Based on Hybrid Semiconductor/Metal Nanoantenna. в: Journal of Physical Chemistry Letters. 2022 ; Том 13, № 20. стр. 4612-4620.

BibTeX

@article{b1004323bad74c55866c98a635206262,

title = "Nanoscale Electrically Driven Light Source Based on Hybrid Semiconductor/Metal Nanoantenna",

abstract = "A micro- or nanosized electrically controlled source of optical radiation is one of the key elements in optoelectronic systems. The phenomenon of light emission via inelastic tunneling (LEIT) of electrons through potential barriers or junctions opens up new possibilities for development of such sources. In this work, we present a simple approach for fabrication of nanoscale electrically driven light sources based on LEIT. We employ STM lithography to locally modify the surface of a Si/Au film stack via heating, which is enabled by a high-density tunnel current. Using the proposed technique, hybrid Si/Au nanoantennas with a minimum diameter of 60 nm were formed. Studying both electronic and optical properties of the obtained nanoantennas, we confirm that the resulting structures can efficiently emit photons in the visible range because of inelastic scattering of electrons. The proposed approach allows for fabrication of nanosized hybrid nanoantennas and studying their properties using STM.",

author = "Lebedev, {Denis V.} and Shkoldin, {Vitaly A.} and Mozharov, {Alexey M.} and Larin, {Artem O.} and Permyakov, {Dmitry V.} and Samusev, {Anton K.} and Petukhov, {Anatoly E.} and Golubok, {Alexander O.} and Arkhipov, {Alexander V.} and Mukhin, {Ivan S.}",

year = "2022",

month = may,

day = "19",

doi = "10.1021/acs.jpclett.2c00986",

language = "English",

volume = "13",

pages = "4612--4620",

journal = "Journal of Physical Chemistry Letters",

issn = "1948-7185",

publisher = "American Chemical Society",

number = "20",

}

RIS

TY - JOUR

T1 - Nanoscale Electrically Driven Light Source Based on Hybrid Semiconductor/Metal Nanoantenna

AU - Lebedev, Denis V.

AU - Shkoldin, Vitaly A.

AU - Mozharov, Alexey M.

AU - Larin, Artem O.

AU - Permyakov, Dmitry V.

AU - Samusev, Anton K.

AU - Petukhov, Anatoly E.

AU - Golubok, Alexander O.

AU - Arkhipov, Alexander V.

AU - Mukhin, Ivan S.

PY - 2022/5/19

Y1 - 2022/5/19

N2 - A micro- or nanosized electrically controlled source of optical radiation is one of the key elements in optoelectronic systems. The phenomenon of light emission via inelastic tunneling (LEIT) of electrons through potential barriers or junctions opens up new possibilities for development of such sources. In this work, we present a simple approach for fabrication of nanoscale electrically driven light sources based on LEIT. We employ STM lithography to locally modify the surface of a Si/Au film stack via heating, which is enabled by a high-density tunnel current. Using the proposed technique, hybrid Si/Au nanoantennas with a minimum diameter of 60 nm were formed. Studying both electronic and optical properties of the obtained nanoantennas, we confirm that the resulting structures can efficiently emit photons in the visible range because of inelastic scattering of electrons. The proposed approach allows for fabrication of nanosized hybrid nanoantennas and studying their properties using STM.

AB - A micro- or nanosized electrically controlled source of optical radiation is one of the key elements in optoelectronic systems. The phenomenon of light emission via inelastic tunneling (LEIT) of electrons through potential barriers or junctions opens up new possibilities for development of such sources. In this work, we present a simple approach for fabrication of nanoscale electrically driven light sources based on LEIT. We employ STM lithography to locally modify the surface of a Si/Au film stack via heating, which is enabled by a high-density tunnel current. Using the proposed technique, hybrid Si/Au nanoantennas with a minimum diameter of 60 nm were formed. Studying both electronic and optical properties of the obtained nanoantennas, we confirm that the resulting structures can efficiently emit photons in the visible range because of inelastic scattering of electrons. The proposed approach allows for fabrication of nanosized hybrid nanoantennas and studying their properties using STM.

UR - http://www.scopus.com/inward/record.url?scp=85131107285&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/ea1791a5-385d-3204-90d9-45de45ea79b5/

U2 - 10.1021/acs.jpclett.2c00986

DO - 10.1021/acs.jpclett.2c00986

M3 - Article

VL - 13

SP - 4612

EP - 4620

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

SN - 1948-7185

IS - 20

ER -

ID: 95340988