TY - JOUR

T1 - Moment canting and domain effects in antiferromagnetic DyRh2Si2

AU - Kliemt, Kristin

AU - Ocker, Michelle

AU - Krebber, Sarah

AU - Schulz, Susanne

AU - Вялых, Денис Васильевич

AU - Krellner, Cornelius

AU - Усачев, Дмитрий Юрьевич

PY - 2023/6/23

Y1 - 2023/6/23

N2 - A combined experimental and theoretical study of the layered antiferromagnetic compound DyRh$_2$Si$_2$ in the ThCr$_2$Si$_2$-type structure is presented. The heat capacity shows two transitions upon cooling, the first one at the N{\'e}el temperature $T_{\rm N}=55\,\rm K$ and a second one at $T_{\rm N2}=12\,\rm K$. Using magnetization measurements, we study the canting process of the Dy moments upon changing the temperature and can assign $T_{\rm N2}$ to the onset of the canting of the magnetic moments towards the $[100]$ direction away from the $c$ axis. Furthermore, we found that the field dependence of the magnetization is highly anisotropic and shows a two-step process for $H\parallel 001$. We used a mean-field model to determine the crystalline electric field as well as the exchange interaction parameters. Our magnetization data together with the calculations reveal a moment orientation close to the $[101]$ direction in the tetragonal structure at low temperatures and fields. Applying photoemission electron microscopy, we explore the (001) surface of the cleaved DyRh$_2$Si$_2$ single crystal and visualize Si- and Dy-terminated surfaces. Our results indicate that the Si-Rh-Si surface protects the deeper lying magnetically active Dy layers and is thus attractive for investigation of magnetic domains and their properties in the large family of LnT$_2$Si$_2$ materials.

AB - A combined experimental and theoretical study of the layered antiferromagnetic compound DyRh$_2$Si$_2$ in the ThCr$_2$Si$_2$-type structure is presented. The heat capacity shows two transitions upon cooling, the first one at the N{\'e}el temperature $T_{\rm N}=55\,\rm K$ and a second one at $T_{\rm N2}=12\,\rm K$. Using magnetization measurements, we study the canting process of the Dy moments upon changing the temperature and can assign $T_{\rm N2}$ to the onset of the canting of the magnetic moments towards the $[100]$ direction away from the $c$ axis. Furthermore, we found that the field dependence of the magnetization is highly anisotropic and shows a two-step process for $H\parallel 001$. We used a mean-field model to determine the crystalline electric field as well as the exchange interaction parameters. Our magnetization data together with the calculations reveal a moment orientation close to the $[101]$ direction in the tetragonal structure at low temperatures and fields. Applying photoemission electron microscopy, we explore the (001) surface of the cleaved DyRh$_2$Si$_2$ single crystal and visualize Si- and Dy-terminated surfaces. Our results indicate that the Si-Rh-Si surface protects the deeper lying magnetically active Dy layers and is thus attractive for investigation of magnetic domains and their properties in the large family of LnT$_2$Si$_2$ materials.

UR - https://www.mendeley.com/catalogue/03b5ebef-3c23-3db5-93b3-1df8a7758123/

U2 - 10.1103/PhysRevB.107.224424

DO - 10.1103/PhysRevB.107.224424

M3 - Article

VL - 107

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 22

M1 - 224424

ER -